Silicon Dioxide Thin Films Prepared from Silicon Tetraacetate Using ArF Excimer Laser by Chemical Vapor Deposition

1998 ◽  
Vol 37 (Part 1, No. 9A) ◽  
pp. 4938-4942 ◽  
Author(s):  
Atsushi Maruyama ◽  
Naoki Tanaka ◽  
Kazuhiro Nakata ◽  
Ken Yukimura ◽  
Shinzo Yoshikado ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Excimer Laser ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Arf Excimer Laser

Silicon dioxide thin films prepared by ArF excimer laser chemical vapor deposition from silicon tetraacetate

1998 ◽  
Vol 54 (1-3) ◽  
pp. 197-200
Author(s):  
Naoki Tanaka ◽  
Atsushi Maruyama ◽  
Ken Yukimura ◽  
Shinzo Yoshikado ◽  
Toshiro Maruyama
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Excimer Laser ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Laser Chemical Vapor Deposition ◽  
Arf Excimer Laser

Preparation of Conductingpolymer Thin Films by Excimer Laser Chemical Vapor Deposition

1997 ◽  
Vol 294 (1) ◽  
pp. 35-38 ◽  
Author(s):  
Satoru Nishio ◽  
Shin-Ichi Okada ◽  
Yae Minamimoto ◽  
Motoyoshi Okumura ◽  
Akiyoshi Matsuzaki ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Excimer Laser ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Laser Chemical Vapor Deposition

Enhanced photoluminescent emission of thin phosphor films via pulsed excimer laser melting

1998 ◽  
Vol 13 (11) ◽  
pp. 3019-3021 ◽  
Author(s):  
J. McKittrick ◽  
G. A. Hirata ◽  
C. F. Bacalski ◽  
R. Sze ◽  
J. Mourant ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Excimer Laser ◽  
Vapor Deposition ◽  
Emission Intensity ◽  
Chemical Vapor ◽  
Spherical Particles ◽  
Laser Melting ◽  
Sapphire Substrates ◽  
Krf Laser

Thin films of (Y0.92Eu0.08)2O3 were synthesized through chemical vapor deposition of β-diketonate precursors onto glass and sapphire substrates. The films were weakly luminescent in the as-deposited condition and were composed of spherical particles 3 μm in diameter. A KrF laser was pulsed for 25 ns from 1–3 times on the surface of the films. One pulse was sufficient to melt the film and repeated pulses caused ablation of the material. Melting of the film smoothed the surface, increased the density, and increased the photoluminescent emission intensity.

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