Room Temperature Deposition of Silicon Nitride Films for Passivation of Organic Electroluminescence Device Using a Sputtering-Type Electron Cyclotron Resonance Plasma

Electron Cyclotron ◽

Organic Electroluminescence ◽

Silicon Nitride Films ◽

Electroluminescence Device ◽

Temperature Deposition ◽

Ion-assisted deposition of silicon nitride films using electron cyclotron resonance plasma

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1371323 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1336-1340 ◽

Cited By ~ 12

Author(s):

K. Deenamma Vargheese ◽

G. Mohan Rao

Keyword(s):

Silicon Nitride ◽

Cyclotron Resonance ◽

Electron Cyclotron ◽

Silicon Nitride Films ◽

Interpretation of stress variation in silicon nitride films deposited by electron cyclotron resonance plasma

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1776179 ◽

2004 ◽

Vol 22 (5) ◽

pp. 1962-1970 ◽

Cited By ~ 15

Author(s):

M. P. Besland ◽

M. Lapeyrade ◽

F. Delmotte ◽

G. Hollinger

Keyword(s):

Silicon Nitride ◽

Cyclotron Resonance ◽

Electron Cyclotron ◽

Stress Variation ◽

Silicon Nitride Films ◽

Characterization of nitrogen-rich silicon nitride films grown by the electron cyclotron resonance plasma technique

Semiconductor Science and Technology ◽

10.1088/0268-1242/18/7/306 ◽

2003 ◽

Vol 18 (7) ◽

pp. 633-641 ◽

Cited By ~ 16

Author(s):

L Wang ◽

H S Reehal ◽

F L Mart nez ◽

E San Andr s ◽

A del Prado

Keyword(s):

Silicon Nitride ◽

Cyclotron Resonance ◽

Electron Cyclotron ◽

Plasma Technique ◽

Silicon Nitride Films ◽

Effect of NH3 flow rate on growth, structure and luminescence of amorphous silicon nitride films by electron cyclotron resonance plasma

Thin Solid Films ◽

10.1016/j.tsf.2007.05.046 ◽

2008 ◽

Vol 516 (6) ◽

pp. 1130-1136 ◽

Cited By ~ 4

Author(s):

Y. Xin ◽

Y. Shi ◽

H. Liu ◽

Z.X. Huang ◽

L. Pu ◽

...

Keyword(s):

Silicon Nitride ◽

Amorphous Silicon ◽

Flow Rate ◽

Cyclotron Resonance ◽

Electron Cyclotron ◽

Amorphous Silicon Nitride ◽

Growth Structure ◽

Silicon Nitride Films ◽

Silicon nitride films deposited at substrate temperatures <100 °C in a permanent magnet electron cyclotron resonance plasma

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.582103 ◽

1999 ◽

Vol 17 (5) ◽

pp. 2612-2618 ◽

Cited By ~ 30

Author(s):

C. Doughty ◽

D. C. Knick ◽

J. B. Bailey ◽

J. E. Spencer

Keyword(s):

Silicon Nitride ◽

Permanent Magnet ◽

Cyclotron Resonance ◽

Electron Cyclotron ◽

Silicon Nitride Films ◽

Substrate Temperatures ◽

Low temperature deposition of silicon nitride films by distributed electron cyclotron resonance plasma‐enhanced chemical vapor deposition

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.579609 ◽

1995 ◽

Vol 13 (6) ◽

pp. 2900-2907 ◽

Cited By ~ 41

Author(s):

S. Sitbon ◽

M. C. Hugon ◽

B. Agius ◽

F. Abel ◽

J. L. Courant ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Low Temperature ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Chemical Vapor ◽

Silicon Nitride Films ◽

Temperature Deposition ◽

Low-temperature deposition of high-quality silicon dioxide films by sputtering-type electron cyclotron resonance plasma

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580664 ◽

1997 ◽

Vol 15 (4) ◽

pp. 1951-1954 ◽

Cited By ~ 20

Author(s):

H. Nakashima ◽

K. Furukawa ◽

Y. C. Liu ◽

D. W. Gao ◽

Y. Kashiwazaki ◽

...

Keyword(s):

Low Temperature ◽

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron ◽

High Quality ◽

Low Temperature Deposition ◽

Temperature Deposition ◽

Silicon nitride films synthesized by reactive pulsed laser deposition in an electron cyclotron resonance nitrogen plasma

Thin Solid Films ◽

10.1016/s0040-6090(99)00324-7 ◽

1999 ◽

Vol 350 (1-2) ◽

pp. 101-105 ◽

Cited By ~ 26

Author(s):

J.D Wu ◽

J Sun ◽

X.X Zhong ◽

Z.Y Zhou ◽

C.Z Wu ◽

...

Keyword(s):

Silicon Nitride ◽

Pulsed Laser Deposition ◽

Cyclotron Resonance ◽

Pulsed Laser ◽

Nitrogen Plasma ◽

Electron Cyclotron ◽

Laser Deposition ◽

Silicon Nitride Films

Silicon nitride deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposititon for micromachining applications

10.1117/12.324050 ◽

1998 ◽

Author(s):

Roberto R. Panepucci ◽

Jose A. Diniz ◽

Eduardo Carli ◽

Peter J. Tatschi ◽

Jacobus W. Swart

Keyword(s):

Silicon Nitride ◽

Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Highly homogeneous silica coatings for optical and protective applications deposited by PECVD at room temperature in a planar uniform distributed electron cyclotron resonance plasma reactor.

Thin Solid Films ◽

10.1016/0040-6090(96)80068-x ◽

1995 ◽

Vol 270 (1-2) ◽

pp. 49-54 ◽

Cited By ~ 12

Author(s):

J.C. Rostaing ◽

F. Coeuret ◽

J. Pelletier ◽

T. Lagarde ◽

R. Etemadi

Keyword(s):

Cyclotron Resonance ◽

Room Temperature ◽

Plasma Reactor ◽

Electron Cyclotron ◽

Silica Coatings ◽