Crystallographic Structures and Parasitic Resistances of Self-Aligned Silicide TiSi2/Self-Aligned Nitrided Barrier Layer/Selective Chemical Vapor Deposited Aluminum in Fully Self-Aligned Metallization Metal Oxide Semiconductor Field-Effect Transistor

1999 ◽  
Vol 38 (Part 1, No. 10) ◽  
pp. 5835-5838
Author(s):  
Chang-Hun Lee ◽  
Takamasa Nishimura ◽  
Hideki Matsuhashi ◽  
Michio Yokoyama ◽  
Kazuya Masu ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Chemical Vapor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Chemical Vapor Deposited ◽  
Crystallographic Structures ◽  
Effect Transistor ◽  
Selective Chemical

Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization Metal-Oxide-Semiconductor Field-Effect-Transistor

1998 ◽  
Vol 37 (Part 1, No. 6A) ◽  
pp. 3264-3267
Author(s):  
Hideki Matsuhashi ◽  
Akio Gotoh ◽  
Chang-Hun Lee ◽  
Michio Yokoyama ◽  
Kazuya Masu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Barrier Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Layer Formation ◽  
Effect Transistor
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