High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates

2000 ◽  
Vol 39 (Part 2, No. 7A) ◽  
pp. L647-L650 ◽  
Author(s):  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Masayuki Senoh ◽  
Toshio Matsushita ◽  
Yasunobu Sugimoto ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Low Dislocation Density ◽  
Long Lifetime ◽  
Multi Quantum Well

High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 36 (Part 2, No. 8B) ◽  
pp. L1059-L1061 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Quantum Well Structure ◽  
Long Lifetime ◽  
Multi Quantum Well ◽  
Structure Laser

Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire

1999 ◽  
Vol 595 ◽  
Author(s):  
Monica Hansen ◽  
Paul Fini ◽  
Lijie Zhao ◽  
Amber Abare ◽  
Larry A. Coldren ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Internal Quantum Efficiency ◽  
Laser Diodes ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Laser ◽  
Low Dislocation Density ◽  
Multi Quantum Well ◽  
Improved Characteristics

AbstractInGaN multi-quantum-well laser diodes have been fabricated on fully-coalesced laterally epitaxially overgrown (LEO) GaN on sapphire. The laterally overgrown ‘wing’ regions as well as the coalescence fronts contained few or no threading dislocations. Laser diodes fabricated on the low-dislocation-density wing regions showed a reduction in threshold current density from 8 kA/cm2 to 3.7 kA/cm2 compared the those on the high-dislocation ‘window’ regions. Laser diodes also showed a twofold reduction in threshold current density when comparing those on the wing regions to those fabricated on conventional planar GaN on sapphire. The internal quantum efficiency also improved from 3% for laser diodes on conventional GaN on sapphire to 22% for laser diodes on LEO GaN on sapphire.

scholarly journals Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire

2000 ◽  
Vol 5 (S1) ◽  
pp. 8-13
Author(s):  
Monica Hansen ◽  
Paul Fini ◽  
Lijie Zhao ◽  
Amber Abare ◽  
Larry A. Coldren ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Internal Quantum Efficiency ◽  
Laser Diodes ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Laser ◽  
Low Dislocation Density ◽  
Fold Reduction ◽  
Multi Quantum Well

InGaN multi-quantum-well laser diodes have been fabricated on fully-coalesced laterally epitaxially overgrown (LEO) GaN on sapphire. The laterally overgrown ‘wing’ regions as well as the coalescence fronts contained few or no threading dislocations. Laser diodes fabricated on the low-dislocation-density wing regions showed a reduction in threshold current density from 8 kA/cm2 to 3.7 kA/cm2 compared the those on the high-dislocation ‘window’ regions. Laser diodes also showed a two-fold reduction in threshold current density when comparing those on the wing regions to those fabricated on conventional planar GaN on sapphire. The internal quantum efficiency also improved from 3% for laser diodes on conventional GaN on sapphire to 22% for laser diodes on LEO GaN on sapphire.

High‐power operation in InGaAs separate confinement heterostructure quantum well laser diodes

1988 ◽  
Vol 53 (1) ◽  
pp. 1-3 ◽  
Author(s):  
M. Kitamura ◽  
S. Takano ◽  
T. Sasaki ◽  
H. Yamada ◽  
I. Mito
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
High Power Operation ◽  
Power Operation

Numerical study on optimization of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers

2009 ◽  
Author(s):  
Jun-Rong Chen ◽  
Tsung-Shine Ko ◽  
Po-Yuan Su ◽  
Tien-Chang Lu ◽  
Hao-Chung Kuo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Numerical Study ◽  
Laser Diodes ◽  
Barrier Layers ◽  
Quantum Well Laser ◽  
Multi Quantum Well

Near Room Temperature CW Operation of 660 nm Visible AlGaAs Multi-Quantum-Well Laser Diodes Grown by Molecular Beam Epitaxy

1985 ◽  
Vol 24 (Part 2, No. 12) ◽  
pp. L911-L913 ◽  
Author(s):  
Hidetoshi Iwamura ◽  
Tadashi Saku ◽  
Yoshiro Hirayama ◽  
Yoshifumi Suzuki ◽  
Hiroshi Okamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Cw Operation ◽  
Multi Quantum Well
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