Growth and Characterization of ZnCdSe/BeZnTe II–VI Compound Type-II Superlattices on InP Substrates and Their Application for Visible Light Emitting Devices

2001 ◽  
Vol 40 (Part 1, No. 12) ◽  
pp. 6747-6752 ◽  
Author(s):  
Song-Bek Che ◽  
Ichirou Nomura ◽  
Tomoyuki Takada ◽  
Akihiko Kikuchi ◽  
Kazuhiko Shimomura ◽  
...  
Keyword(s):  
Visible Light ◽  
Type Ii ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Type Ii Superlattices ◽  
Compound Type ◽  
Inp Substrates

Proposal of a novel BeZnSeTe quaternary for II-VI middle range visible light emitting devices on InP substrates

2004 ◽  
Vol 241 (3) ◽  
pp. 747-750 ◽  
Author(s):  
Yasushi Takashima ◽  
Ichirou Nomura ◽  
Yuki Nakai ◽  
Akihiko Kikuchi ◽  
Katsumi Kishino
Keyword(s):  
Visible Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Middle Range ◽  
Inp Substrates

Optical characterization of ZnMnSSe quaternary alloys for visible light emitting devices

1996 ◽  
Vol 159 (1-4) ◽  
pp. 50-53 ◽  
Author(s):  
J.W. Hutchins ◽  
B. Parameshwaran ◽  
B.J. Skromme ◽  
David J. Smith ◽  
S. Sivananthan
Keyword(s):  
Visible Light ◽  
Optical Characterization ◽  
Quaternary Alloys ◽  
Light Emitting ◽  
Light Emitting Devices

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

Structure, morphology and optical characterization of Dy 3+ -doped BaYF 5 nanocrystals for warm white light emitting devices

2017 ◽  
Vol 70 ◽  
pp. 16-24 ◽  
Author(s):  
P. Haritha ◽  
I.R. Martín ◽  
C.S. Dwaraka Viswanath ◽  
N. Vijaya ◽  
K. Venkata Krishnaiah ◽  
...  
Keyword(s):  
White Light ◽  
Optical Characterization ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Warm White Light ◽  
Structure Morphology
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