Correction for ‘Direct characterization of graphene doping state by in situ photoemission spectroscopy with Ar gas cluster ion beam sputtering’ by Dong-Jin Yun et al., Phys. Chem. Chem. Phys., 2018, 20, 615–622.
With optimization, GCIB-O2+ cosputter is a promising technique for preserving molecular structures during ion sputtering and successfully profiled soft materials.
Thein situPES – Ar GCIB sputtering combined analysis enable to characterize the persistence of controlled energy-level at organic semiconductor/electrode interfaces.