Mobility of Charge Carriers in Regioregular Poly(3-hexylthiophene) Induced by Field-Effect Transistor with Al2O3as Gate Insulator

2004 ◽  
Vol 43 (1) ◽  
pp. 366-371 ◽  
Author(s):  
Sota Ukai ◽  
Hiroshi Ito ◽  
Shin-ichi Kuroda
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Carriers ◽  
Gate Insulator ◽  
Regioregular Poly ◽  
Mobility Of Charge Carriers ◽  
Effect Transistor

scholarly journals Исследование подвижности носителей заряда в слоях нанокристаллов PBS методом полевого транзистора

2022 ◽  
Vol 56 (2) ◽  
pp. 236
Author(s):  
П.С. Парфенов ◽  
Н.В. Бухряков ◽  
Д.А. Онищук ◽  
А.А. Бабаев ◽  
А.В. Соколова ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ambient Air ◽  
Inert Atmosphere ◽  
Charge Carriers ◽  
Mobility Of Charge Carriers ◽  
Tetrabutylammonium Iodide ◽  
Effect Transistor ◽  
The Difference ◽  
Current Flows

The field-effect transistor method is used to study the mobility of charge carriers in layers of lead sulfide nanocrystals with ligands of tetrabutylammonium iodide and 1,2-ethanedithiol used to create solar cells. The difference between the operating of a transistor in ambient air and in an inert atmosphere is demonstrated. It is shown that, in the ambient air, the processes of charging nanocrystals are activated when current flows, and the influence of the polarization of the interface of nanocrystals and the insulator on the measurement of the mobility is analyzed. Different reactions of the layers with ligands to light have been demonstrated, showing a significant oxidation of the surface of nanocrystals treated with 1,2-ethanedithiol.

scholarly journals High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor

2011 ◽  
Vol 120 (6A) ◽  
pp. A-22-A-24 ◽  
Author(s):  
A. Taube ◽  
R. Kruszka ◽  
M. Borysiewicz ◽  
S. Gierałtowska ◽  
E. Kamińska ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
High Quality ◽  
Enhancement Mode ◽  
Mode Field ◽  
Effect Transistor

Single crystal SrTiO3 field-effect transistor with an atomically flat amorphous CaHfO3 gate insulator

2004 ◽  
Vol 85 (3) ◽  
pp. 425-427 ◽  
Author(s):  
Keisuke Shibuya ◽  
Tsuyoshi Ohnishi ◽  
Mikk Lippmaa ◽  
Masashi Kawasaki ◽  
Hideomi Koinuma
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
Effect Transistor ◽  
Atomically Flat

Analysis of Pentacene Field-Effect Transistor with a Ferroelectric P(VDF–TeFE) Gate Insulator as an Element of Maxwell–Wagner Effect System

2009 ◽  
Vol 48 (2) ◽  
pp. 021501 ◽  
Author(s):  
Ryousuke Tamura ◽  
Shuhei Yoshita ◽  
Eunju Lim ◽  
Takaaki Manaka ◽  
Mitsumasa Iwamoto
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
Effect Transistor
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