Excellent carrier mobility of 0.24 cm2/Vs in regioregular poly(3-hexylthiophene) based field-effect transistor by employing octadecyltrimethoxysilane treated gate insulator

2012 ◽  
Vol 100 (2) ◽  
pp. 023304 ◽  
Author(s):  
Yi-Da Jiang ◽  
Tzu-Hao Jen ◽  
Show-An Chen
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
Regioregular Poly ◽  
Effect Transistor

Patterning rubrene crystalline thin films for sub-micrometer channel length field-effect transistor arrays

2014 ◽  
Vol 2 (44) ◽  
pp. 9359-9363 ◽  
Author(s):  
Juan Zhu ◽  
Wenchong Wang ◽  
Qigang Zhong ◽  
Liqiang Li ◽  
Chuan Du ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Channel Length ◽  
Organic Films ◽  
Porous Structures ◽  
Patterned Growth ◽  
Effect Transistor ◽  
Magnitude Difference

The patterned growth of crystalline rubrene films directly on electrodes is demonstrated. In addition, organic films with close packed and porous structures are locally achieved by controlling the electrode spaces, resulting in a two orders of magnitude difference in carrier mobility.

scholarly journals High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor

2011 ◽  
Vol 120 (6A) ◽  
pp. A-22-A-24 ◽  
Author(s):  
A. Taube ◽  
R. Kruszka ◽  
M. Borysiewicz ◽  
S. Gierałtowska ◽  
E. Kamińska ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
High Quality ◽  
Enhancement Mode ◽  
Mode Field ◽  
Effect Transistor

Single crystal SrTiO3 field-effect transistor with an atomically flat amorphous CaHfO3 gate insulator

2004 ◽  
Vol 85 (3) ◽  
pp. 425-427 ◽  
Author(s):  
Keisuke Shibuya ◽  
Tsuyoshi Ohnishi ◽  
Mikk Lippmaa ◽  
Masashi Kawasaki ◽  
Hideomi Koinuma
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
Effect Transistor ◽  
Atomically Flat
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