Microscopic Analysis of Stress-Induced Leakage Current in Stressed Gate SiO2Films Using Conductive Atomic Force Microscopy

2004 ◽  
Vol 43 (No. 2A) ◽  
pp. L144-L147 ◽  
Author(s):  
Yukihiko Watanabe ◽  
Akiyoshi Seko ◽  
Hiroki Kondo ◽  
Akira Sakai ◽  
Shigeaki Zaima ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Leakage Current ◽  
Microscopic Analysis ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Stress Induced Leakage Current

Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy

2018 ◽  
Vol 123 (16) ◽  
pp. 161417 ◽  
Author(s):  
T. Hamachi ◽  
S. Takeuchi ◽  
T. Tohei ◽  
M. Imanishi ◽  
M. Imade ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Single Crystals ◽  
Leakage Current ◽  
Current Analysis ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Bulk Single Crystals

Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy

2010 ◽  
Author(s):  
M. Adachi ◽  
M. Sakashita ◽  
H. Kondo ◽  
W. Takeuchi ◽  
O. Nakatsuka ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Leakage Current ◽  
Oxide Thin Films ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Investigation of leakage current paths in n-GaN by conductive atomic force microscopy

2014 ◽  
Vol 104 (10) ◽  
pp. 102101 ◽  
Author(s):  
Bumho Kim ◽  
Daeyoung Moon ◽  
Kisu Joo ◽  
Sewoung Oh ◽  
Young Kuk Lee ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Leakage Current ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Analysis of Local Leakage Current of Pr-Oxide Thin Films with Conductive Atomic Force Microscopy

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DA08
Author(s):  
Masaki Adachi ◽  
Yuzo Kato ◽  
Kimihiko Kato ◽  
Mitsuo Sakashita ◽  
Hiroki Kondo ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Leakage Current ◽  
Oxide Thin Films ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Analysis of Local Leakage Current of Pr-Oxide Thin Films with Conductive Atomic Force Microscopy

2011 ◽  
Vol 50 (4) ◽  
pp. 04DA08 ◽  
Author(s):  
Masaki Adachi ◽  
Yuzo Kato ◽  
Kimihiko Kato ◽  
Mitsuo Sakashita ◽  
Hiroki Kondo ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Leakage Current ◽  
Oxide Thin Films ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Fault Isolation of MOL and FEOL Buried Defects Using Conductive Atomic Force Microscopy as a Complement to Passive Voltage Contrast Imaging

2017 ◽  
Author(s):  
Lucile C. Teague Sheridan ◽  
Linda Conohan ◽  
Chong Khiam Oh
Keyword(s):  
Atomic Force Microscopy ◽  
Cmos Technology ◽  
Fault Isolation ◽  
Contrast Imaging ◽  
Conductive Atomic Force Microscopy ◽  
Isolation Technique ◽  
Conductive Afm ◽  
Force Microscopy ◽  
Atomic Force ◽  
Voltage Contrast

Abstract Atomic force microscopy (AFM) methods have provided a wealth of knowledge into the topographic, electrical, mechanical, magnetic, and electrochemical properties of surfaces and materials at the micro- and nanoscale over the last several decades. More specifically, the application of conductive AFM (CAFM) techniques for failure analysis can provide a simultaneous view of the conductivity and topographic properties of the patterned features. As CMOS technology progresses to smaller and smaller devices, the benefits of CAFM techniques have become apparent [1-3]. Herein, we review several cases in which CAFM has been utilized as a fault-isolation technique to detect middle of line (MOL) and front end of line (FEOL) buried defects in 20nm technologies and beyond.

Fault Localization in Contact Level by Using Conductive Atomic Force Microscopy

2003 ◽  
Author(s):  
Jon C. Lee ◽  
J. H. Chuang
Keyword(s):  
Atomic Force Microscopy ◽  
Integrated Circuits ◽  
Fault Localization ◽  
Electrical Characterization ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Optical Electron ◽  
Defect Isolation ◽  
Voltage Contrast

Abstract As integrated circuits (IC) have become more complicated with device features shrinking into the deep sub-micron range, so the challenge of defect isolation has become more difficult. Many failure analysis (FA) techniques using optical/electron beam and scanning probe microscopy (SPM) have been developed to improve the capability of defect isolation. SPM provides topographic imaging coupled with a variety of material characterization information such as thermal, magnetic, electric, capacitance, resistance and current with nano-meter scale resolution. Conductive atomic force microscopy (C-AFM) has been widely used for electrical characterization of dielectric film and gate oxide integrity (GOI). In this work, C-AFM has been successfully employed to isolate defects in the contact level and to discriminate various contact types. The current mapping of C-AFM has the potential to identify micro-leaky contacts better than voltage contrast (VC) imaging in SEM. It also provides I/V information that is helpful to diagnose the failure mechanism by comparing I/V curves of different contact types. C-AFM is able to localize faulty contacts with pico-amp current range and to characterize failure with nano-meter scale lateral resolution. C-AFM should become an important technique for IC fault localization. FA examples of this technique will be discussed in the article.

Iron related precipitates in multicrystalline silicon by conductive atomic force microscopy

2021 ◽  
Vol 129 ◽  
pp. 105789
Author(s):  
Pierpaolo Vecchi ◽  
Giovanni Armaroli ◽  
Marisa Di Sabatino ◽  
Daniela Cavalcoli
Keyword(s):  
Atomic Force Microscopy ◽  
Multicrystalline Silicon ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force
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