Fault Isolation of MOL and FEOL Buried Defects Using Conductive Atomic Force Microscopy as a Complement to Passive Voltage Contrast Imaging

2017 ◽  
Author(s):  
Lucile C. Teague Sheridan ◽  
Linda Conohan ◽  
Chong Khiam Oh
Keyword(s):  
Atomic Force Microscopy ◽  
Cmos Technology ◽  
Fault Isolation ◽  
Contrast Imaging ◽  
Conductive Atomic Force Microscopy ◽  
Isolation Technique ◽  
Conductive Afm ◽  
Force Microscopy ◽  
Atomic Force ◽  
Voltage Contrast

Abstract Atomic force microscopy (AFM) methods have provided a wealth of knowledge into the topographic, electrical, mechanical, magnetic, and electrochemical properties of surfaces and materials at the micro- and nanoscale over the last several decades. More specifically, the application of conductive AFM (CAFM) techniques for failure analysis can provide a simultaneous view of the conductivity and topographic properties of the patterned features. As CMOS technology progresses to smaller and smaller devices, the benefits of CAFM techniques have become apparent [1-3]. Herein, we review several cases in which CAFM has been utilized as a fault-isolation technique to detect middle of line (MOL) and front end of line (FEOL) buried defects in 20nm technologies and beyond.

Fault Localization in Contact Level by Using Conductive Atomic Force Microscopy

2003 ◽  
Author(s):  
Jon C. Lee ◽  
J. H. Chuang
Keyword(s):  
Atomic Force Microscopy ◽  
Integrated Circuits ◽  
Fault Localization ◽  
Electrical Characterization ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Optical Electron ◽  
Defect Isolation ◽  
Voltage Contrast

Abstract As integrated circuits (IC) have become more complicated with device features shrinking into the deep sub-micron range, so the challenge of defect isolation has become more difficult. Many failure analysis (FA) techniques using optical/electron beam and scanning probe microscopy (SPM) have been developed to improve the capability of defect isolation. SPM provides topographic imaging coupled with a variety of material characterization information such as thermal, magnetic, electric, capacitance, resistance and current with nano-meter scale resolution. Conductive atomic force microscopy (C-AFM) has been widely used for electrical characterization of dielectric film and gate oxide integrity (GOI). In this work, C-AFM has been successfully employed to isolate defects in the contact level and to discriminate various contact types. The current mapping of C-AFM has the potential to identify micro-leaky contacts better than voltage contrast (VC) imaging in SEM. It also provides I/V information that is helpful to diagnose the failure mechanism by comparing I/V curves of different contact types. C-AFM is able to localize faulty contacts with pico-amp current range and to characterize failure with nano-meter scale lateral resolution. C-AFM should become an important technique for IC fault localization. FA examples of this technique will be discussed in the article.

Conductive-AFM for Failure Analysis of Parametric Test Structures in Advanced Technology Development

2017 ◽  
Author(s):  
Chuan Zhang ◽  
Esther P.Y. Chen
Keyword(s):  
Atomic Force Microscopy ◽  
Failure Analysis ◽  
Failure Modes ◽  
Technology Development ◽  
Advanced Technology ◽  
Conductive Atomic Force Microscopy ◽  
Parametric Test ◽  
Conductive Afm ◽  
Force Microscopy ◽  
Atomic Force

Abstract A variety of parametric test structures were designed with the purpose of characterizing parameters tied to failure modes for specific structures, and the electrical test of the parametric test structures are typically conducted earlier inline, which could be months ahead of the functional test. Due to the unique advantages, conductive-atomic force microscopy (CAFM) was introduced to parametric test structure failure analysis during advanced technology development, and has been proven to be a powerful solution to many challenging failure analysis (FA) problems. This paper uses several case studies to illustrate how CAFM can be used to successfully localize defects in challenging parametric test structures that would otherwise be invisible with conventional FA techniques.

Gate Oxide Defect Localization and Analysis by Using Conductive Atomic Force Microscopy

2005 ◽  
Author(s):  
Z. H. Lee ◽  
C. J. Lin ◽  
S. W. Lai ◽  
J. H. Chou
Keyword(s):  
Atomic Force Microscopy ◽  
Case Studies ◽  
Gate Oxide ◽  
Wet Etching ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Defect Localization ◽  
Different Types ◽  
Voltage Contrast

Abstract This paper describes gate oxide defect localization and analysis using passive voltage contrast (PVC) and conductive atomic force microscopy (C-AFM) in a real product through two case studies. In this paper, 10% wt KOH was used to etch poly-Si and expose gate oxide. In the case studies, different types of gate oxide defects will cause different leakage paths. According to the I-V curve measured by C-AFM, we can distinguish between short mode and gate oxide related leakage. For gate oxide leakage, KOH wet etching was successfully used to identify the gate oxide pinholes.

Fault Isolation of Dense High Rc Array by Using Conductive Atomic Force Microscopy

2011 ◽  
Author(s):  
Wei-Shan Hu ◽  
Hui-Wen Yang ◽  
Yung-Sheng Huang
Keyword(s):  
Atomic Force Microscopy ◽  
Integrated Circuit ◽  
Point Contact ◽  
Circuit Complexity ◽  
Fault Isolation ◽  
Advanced Technology ◽  
Acceptance Test ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Abstract Integrated circuit complexity and density are continuously increasing with the rapid progress of advanced technology nodes. The density of wafer acceptance test (WAT) pattern is also becoming higher as the device continuing to shrink. Failure analysis (FA) techniques have been developed to improve the precision of defect isolation. A technique with more precise fault isolation capability is needed when the test pattern density increased. In this paper we have isolated faults within a dense high Rc array by using conductive atomic force microscopy (C-AFM). The fault sites in the array can be located efficiently with nano-scale precision. Point contact I-V measurements provide a quantitative comparison of the fault sites.

Application of Conductive-AFM in Soft Failure Analysis

2017 ◽  
Author(s):  
Chuan Zhang ◽  
Yinzhe Ma ◽  
Gregory Dabney ◽  
Oh Chong Khiam ◽  
Esther P.Y. Chen
Keyword(s):  
Failure Analysis ◽  
Conductive Atomic Force Microscopy ◽  
Test Parameter ◽  
Conductive Afm ◽  
Force Microscopy ◽  
Analysis Methodology ◽  
Soft Failure ◽  
Atomic Force ◽  
Test Conditions ◽  
Sensitive Characteristics

Abstract Soft failures are among the most challenging yield detractors. They typically show test parameter sensitive characteristics, which would pass under certain test conditions but fail under other conditions. Conductive-atomic force microscopy (CAFM) emerged as an ideal solution for soft failure analysis that can balance the time and thoroughness. By inserting CAFM into the soft failure analysis flow, success rate of such type of analysis can be significantly enhanced. In this paper, a logic chain soft failure and a SRAM local bitline soft failure are used as examples to illustrate how this failure analysis methodology provides a powerful and efficient solution for soft failure analysis.

Die-Level Scanning Capacitance Microscopy Fault Isolation on SOI Fin-FET Devices for Advanced Semiconductor Nodes

2018 ◽  
Author(s):  
Lucile C. Teague Sheridan ◽  
Tanya Schaeffer ◽  
Yuting Wei ◽  
Satish Kodali ◽  
Chong Khiam Oh
Keyword(s):  
Atomic Force Microscopy ◽  
Failure Analysis ◽  
Fault Isolation ◽  
Scanning Capacitance Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Abstract It is widely acknowledged that Atomic force microscopy (AFM) methods such as conductive probe AFM (CAFM) and Scanning Capacitance Microscopy (SCM) are valuable tools for semiconductor failure analysis. One of the main advantages of these techniques is the ability to provide localized, die-level fault isolation over an area of several microns much faster than conventional nanoprobing methods. SCM, has advantages over CAFM in that it is not limited to bulk technologies and can be utilized for fault isolation on SOI-based technologies. Herein, we present a case-study of SCM die-level fault isolation on SOI-based FinFET technology at the 14nm node.

Iron related precipitates in multicrystalline silicon by conductive atomic force microscopy

2021 ◽  
Vol 129 ◽  
pp. 105789
Author(s):  
Pierpaolo Vecchi ◽  
Giovanni Armaroli ◽  
Marisa Di Sabatino ◽  
Daniela Cavalcoli
Keyword(s):  
Atomic Force Microscopy ◽  
Multicrystalline Silicon ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force
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