High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2017.11.004 ◽

2018 ◽

Vol 483 ◽

pp. 89-93 ◽

Author(s):

M. Charles ◽

Y. Baines ◽

A. Bavard ◽

R. Bouveyron

Keyword(s):

Growth Rate ◽

Vapor Phase ◽

High Growth ◽

High Electron Mobility Transistors ◽

High Growth Rate ◽

High Electron ◽

High Electron Mobility ◽

Organic Vapor ◽

Electron Mobility Transistors ◽

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High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2828 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2828-2832 ◽

Author(s):

Hiroki Sugiyama ◽

Toshihiko Kosugi ◽

Haruki Yokoyama ◽

Koichi Murata ◽

Yasuro Yamane ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Performance ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Organic Vapor ◽

Electron Mobility Transistors ◽

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High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy

10.7567/ssdm.2007.g-3-2 ◽

2007 ◽

Author(s):

Hiroki Sugiyama ◽

Toshihiko Kosugi ◽

Haruki Yokoyama ◽

Koichi Murata ◽

Yasuro Yamane ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Performance ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Organic Vapor ◽

Electron Mobility Transistors ◽

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Growth of silicon-doped Al0.6Ga0.4N with low carbon concentration at high growth rate using high-flow-rate metal organic vapor phase epitaxy reactor

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.05fe04 ◽

2016 ◽

Vol 55 (5S) ◽

pp. 05FE04 ◽

Author(s):

Kazutada Ikenaga ◽

Akira Mishima ◽

Yoshiki Yano ◽

Toshiya Tabuchi ◽

Koh Matsumoto

Keyword(s):

Growth Rate ◽

Vapor Phase ◽

Flow Rate ◽

High Growth ◽

High Growth Rate ◽

High Flow ◽

Organic Vapor ◽

Metal Organic ◽

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High growth rate metal organic vapor phase epitaxy GaN

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2008.06.009 ◽

2008 ◽

Vol 310 (17) ◽

pp. 3950-3952 ◽

Author(s):

Koh Matsumoto ◽

Hiroki Tokunaga ◽

Akinori Ubukata ◽

Kazumasa Ikenaga ◽

Yasushi Fukuda ◽

...

Keyword(s):

Growth Rate ◽

Vapor Phase ◽

High Growth ◽

High Growth Rate ◽

Vapor Phase Epitaxy ◽

Organic Vapor ◽

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Electron mobility enhancement in metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors by control of surface morphology of spacer layer

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.01ad01 ◽

2017 ◽

Vol 57 (1S) ◽

pp. 01AD01 ◽

Author(s):

Atsushi Yamada ◽

Tetsuro Ishiguro ◽

Junji Kotani ◽

Norikazu Nakamura

Keyword(s):

Surface Morphology ◽

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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AlGaAs/GaAs double‐heterojunction high electron mobility transistors grown by low‐pressure organometallic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.345244 ◽

1990 ◽

Vol 67 (1) ◽

pp. 550-552 ◽

Author(s):

Rong‐Ting Huang ◽

Yung‐Yi Tu ◽

Dumrong Kasemset ◽

N. Nouri ◽

C. Colvard ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Low Pressure ◽

Vapor Phase Epitaxy ◽

High Electron ◽

Organometallic Vapor Phase Epitaxy ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Heterojunction

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Advantages of the AlGaN spacer in InAlN high-electron-mobility transistors grown using metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.05fk03 ◽

2016 ◽

Vol 55 (5S) ◽

pp. 05FK03 ◽

Author(s):

Atsushi Yamada ◽

Tetsuro Ishiguro ◽

Junji Kotani ◽

Shuichi Tomabechi ◽

Norikazu Nakamura ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.7939 ◽

2004 ◽

Vol 43 (12) ◽

pp. 7939-7943 ◽

Author(s):

Makoto Miyoshi ◽

Masahiro Sakai ◽

Subramaniam Arulkumaran ◽

Hiroyasu Ishikawa ◽

Takashi Egawa ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors

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Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.4927743 ◽

2015 ◽

Vol 107 (4) ◽

pp. 043503 ◽

Author(s):

JunShuai Xue ◽

JinCheng Zhang ◽

Yue Hao

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Organic Chemical ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses

physica status solidi (a) ◽

10.1002/pssa.201900760 ◽

2020 ◽

Vol 217 (7) ◽

pp. 1900760

Author(s):

Eric Frayssinet ◽

Luan Nguyen ◽

Marie Lesecq ◽

Nicolas Defrance ◽

Maxime Garcia Barros ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Vapor Phase Epitaxy ◽

Buffer Layers ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metalorganic Chemical

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