Strain Reduction and Long Wavelength Emission from InAs/GaAs Quamtum Dots by Using Growth Interruption in Molecular Beam Epitaxy

2006 ◽  
Vol 45 (4A) ◽  
pp. 2430-2432
Author(s):  
Shanmugam Saravanan ◽  
Hitoshi Shimizu ◽  
Pablo O. Vaccaro
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Long Wavelength ◽  
Growth Interruption ◽  
Wavelength Emission

Influence of growth interruption on the formation of solid-state interfaces

2006 ◽  
Vol 21 (2) ◽  
pp. 122-124
Author(s):  
I. Busch ◽  
J. Stümpel ◽  
M. Krumrey
Keyword(s):  
Solid State ◽  
Molecular Beam Epitaxy ◽  
Correlation Length ◽  
Molecular Beam ◽  
Morphological Properties ◽  
X Ray ◽  
X Ray Scattering ◽  
Growth Interruption ◽  
Vertical Correlation ◽  
Ray Scattering

In this study, the effects of growth interruptions on the formation of the interfaces in GaAs∕AlAs multilayers are investigated. For that purpose, a series of different samples has been manufactured with molecular-beam epitaxy. The introduction of growth interruptions of 50 s after the deposition of the layer leads to a change in the morphological properties of the interfaces, in particular their correlation length. These modifications due to the growth interrupt are analyzed with diffuse X-ray scattering. As a result of the measurements, an extension of the lateral correlation length can be proved. By contrast, the vertical correlation of the interfaces is not affected.

Planar n-on-p ion milled mid-wavelength and long-wavelength infrared diodes on molecular beam epitaxy vacancy-doped CdHgTe on CdZnTe

2002 ◽  
Vol 31 (7) ◽  
pp. 710-714 ◽  
Author(s):  
R. Haakenaasen ◽  
H. Steen ◽  
T. Lorentzen ◽  
L. Trosdahl-Iversen ◽  
A. D. Van Rheenen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Molecular beam epitaxy grown long wavelength infrared HgCdTe on compliant Si substrates

2006 ◽  
Author(s):  
Priyalal S. Wijewarnasuriya ◽  
Yuanping Chen ◽  
Gregory Brill ◽  
Nibir K. Dhar ◽  
Michael Carmody ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Long Wavelength ◽  
Si Substrates ◽  
Long Wavelength Infrared

Molecular beam epitaxial growth window for high-quality (Ga,In)(N,As) quantum wells for long wavelength emission

2006 ◽  
Vol 88 (19) ◽  
pp. 191115 ◽  
Author(s):  
Fumitaro Ishikawa ◽  
Michael Höricke ◽  
Uwe Jahn ◽  
Achim Trampert ◽  
Klaus H. Ploog
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
High Quality ◽  
Long Wavelength ◽  
Molecular Beam Epitaxial ◽  
Wavelength Emission ◽  
Molecular Beam Epitaxial Growth
Sign in / Sign up

Export Citation Format

Share Document