Lowering the Switching Current of Resistance Random Access Memory Using a Hetero Junction Structure Consisting of Transition Metal Oxides

2006 ◽  
Vol 45 (No. 37) ◽  
pp. L991-L994 ◽  
Author(s):  
Kentaro Kinoshita ◽  
Tetsuro Tamura ◽  
Masaki Aoki ◽  
Yoshihiro Sugiyama ◽  
Hitoshi Tanaka
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Switching Current ◽  
Resistance Random Access Memory ◽  
Junction Structure

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3

2011 ◽  
Vol 22 (25) ◽  
pp. 254029 ◽  
Author(s):  
Blanka Magyari-Köpe ◽  
Mihir Tendulkar ◽  
Seong-Geon Park ◽  
Hyung Dong Lee ◽  
Yoshio Nishi
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Resistive Switching ◽  
Transition Metal Oxides ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory

Reactive Ion Etching Process of Transition-Metal Oxide for Resistance Random Access Memory Device

2008 ◽  
Vol 47 (8) ◽  
pp. 6931-6933 ◽  
Author(s):  
Fumiyoshi Takano ◽  
Hisashi Shima ◽  
Hidenobu Muramatsu ◽  
Yutaka Kokaze ◽  
Yutaka Nishioka ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Reactive Ion Etching ◽  
Random Access ◽  
Random Access Memory ◽  
Transition Metal Oxide ◽  
Memory Device ◽  
Access Memory ◽  
Ion Etching ◽  
Resistance Random Access Memory
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