Which parameter dominantly decides the value of time required to reset ReRAM (treset) among possible parameters, the value of a low resistance (RL), voltage to induce reset (Vreset), and temperature to induce reset (Treset)? Although to answer this question is important to achieve faster resistive switching, detailed correlations between the parameters are still unclear. In this paper, we extracted treset, Vreset, RL and Treset at the same time by combining two electrical measurements. As a result, we found a clear correlation between Vreset, RL, and Treset, meaning that each parameter can not be controlled independently. Tresetincreases not only with increasing Vresetbut also with increasing RL, which suggests the necessity of introducing ununiformly-shaped filamens and resistive switching takes place at the narrowing part of the filament.
Correlation between filament distribution and resistive switching properties in resistive random access memory consisting of binary transition-metal oxides