Annealing of GaN/ZnO/Si Films Deposited by Pulsed Laser Deposition

2007 ◽  
Vol 46 (2) ◽  
pp. 526-529 ◽  
Author(s):  
Cheng Yang ◽  
Baoyuan Man ◽  
Huizhao Zhuang ◽  
Xianqi Wei ◽  
Mei Liu ◽  
...  
1996 ◽  
Vol 441 ◽  
Author(s):  
M. E. Taylor ◽  
Harry A. Atwater ◽  
M. V. Ramana Murty

AbstractPulsed laser deposition of Si on dihydride-terminated (l×1) Si (001) at low temperatures yields epitaxial layers, unlike molecular beam epitaxy. Si films were grown by ultrahigh vacuum pulsed laser deposition on the dihydride surface at substrate temperatures from 40 °C to 350 ° C. Epitaxial thickness and interface roughness were measured by high-resolution cross-sectional transmission electron microscopy and found to be comparable to known data for Si films grown by molecular beam epitaxy on monohydride-terminated (2×l) Si (001). Si films were grown at 200 °C by pulsed laser deposition on the dihydride surface at argon background pressures between 10− torr and 10−1 torr. Ion probe time of flight data was collected over the same pressure range. Comparison of the results suggests that loss of epitaxy is correlated with low incident energy. This, in conjunction with information on surface reconstruction obtained from reflection high-energy electron diffraction, suggests that the mechanism enabling epitaxy on the dihydride surface is Si subplantation, a mechanism only possible in growth with an energetic beam.


1994 ◽  
Vol 64 (26) ◽  
pp. 3623-3625
Author(s):  
V. Nevolin ◽  
E. Chubunova ◽  
I. Khabelashvili ◽  
Yu. Lebedinskii ◽  
A. Zenkevich ◽  
...  

2011 ◽  
Vol 29 (1) ◽  
pp. 105-111 ◽  
Author(s):  
Y.L. Wang ◽  
C. Chen ◽  
X.C. Ding ◽  
L.Z. Chu ◽  
Z.C. Deng ◽  
...  

AbstractWe present a method to determine where the nanoparticles nucleate and grow during pulsed laser deposition in an ambient gas. Briefly, nanocrystalline Si films are systemically deposited on the substrates located at a distance from the plasma and placed in horizontal direction; meanwhile an external electric field is introduced perpendicularly to the plume. Based on the transportation dynamics of Si nanoparticles corresponding to different electric fields, the lateral nucleation range of 0.1 to 33.8 mm is determined for Si nanoparticles deposited in 10 Pa Ar gas at a laser fluence of 4 J/cm2. Further simulation of the mass and area density of Si nanoparticles demonstrates that both nucleation and growth probabilities in nucleation region are approximately Gauss-dependent of the lateral distance.


Author(s):  
Michael P. Mallamaci ◽  
James Bentley ◽  
C. Barry Carter

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.


1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-261-Pr9-264
Author(s):  
M. Tyunina ◽  
J. Levoska ◽  
A. Sternberg ◽  
V. Zauls ◽  
M. Kundzinsh ◽  
...  

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-65-Pr11-69
Author(s):  
N. Lemée ◽  
H. Bouyanfif ◽  
J. L. Dellis ◽  
M. El Marssi ◽  
M. G. Karkut ◽  
...  

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.


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