Mechanism of AlGaN/GaN Heterostructure Field-Effect Transistor Threshold Voltage Shift by Illumination

2008 ◽  
Vol 47 (4) ◽  
pp. 2103-2107 ◽  
Author(s):  
Masaya Okada ◽  
Hideki Ito ◽  
Jin-Ping Ao ◽  
Yasuo Ohno
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Effect Transistor ◽  
Gan Heterostructure

Threshold voltage shift characterization of vertically stacked InAs nanodots in field-effect transistor

2001 ◽  
Vol 227-228 ◽  
pp. 1166-1170 ◽  
Author(s):  
Shuwei Li ◽  
Kazuto Koike ◽  
Hisayoshi Komai ◽  
Mitsuaki Yano
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Effect Transistor

Fabrication of 0.1 µm channel diamond Metal-Insulator-Semiconductor Field-Effect Transistor

2001 ◽  
Vol 680 ◽  
Author(s):  
Hitoshi Umezawa ◽  
Yoshikazu Ohba ◽  
Hiroaki Ishizaka ◽  
Takuya Arima ◽  
Hirotada Taniuchi ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
Short Channel ◽  
Threshold Voltage Shift ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Voltage Shift ◽  
Effect Transistor

ABSTRACTAnalysis of diamond short channel effect is carried out for the first time. 70 nm channel diamond metal-insulator semiconductor field-effect transistor is realized by utilizing new FET fabrication process on the hydrogen-terminated surface conductive layer. This FET is the shortest gate length in diamond FETs. FETs with thick gate insulator of 35 nm show significant threshold voltage shift and degradation of subthreshold slope S by the gate refining. This phenomenon occurs due to the penetration of drain field into channel. However, the degradation of subthreshold performance and threshold voltage shift are hardly observed in 0.17 µm FET with thin gate insulator 15 nm in thickness.

Analysis of threshold voltage shift of pentacene field effect transistor with ferroelectric gate insulator as a Maxwell–Wagner effect

2008 ◽  
Vol 516 (9) ◽  
pp. 2753-2757 ◽  
Author(s):  
Ryousuke Tamura ◽  
Eunju Lim ◽  
Shuhei Yoshita ◽  
Takaaki Manaka ◽  
Mitsumasa Iwamoto
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Effect Transistor

scholarly journals Understanding of Polarization-Induced Threshold Voltage Shift in Ferroelectric-Gated Field Effect Transistor for Neuromorphic Applications

Electronics ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 704 ◽  
Author(s):  
Seungjun Moon ◽  
Jaemin Shin ◽  
Changhwan Shin
Keyword(s):  
Threshold Voltage ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Ferroelectric Capacitor ◽  
Voltage Sweep ◽  
Source Voltage ◽  
Effect Transistor

A ferroelectric-gated fin-shaped field effect transistor (Fe-FinFET) is fabricated by connecting a Pb(Zr0.2Ti0.8)O3-based ferroelectric capacitor into the gate electrode of FinFET. The ferroelectric capacitor shows coercive voltages of approximately −1.5 V and 2.25 V. The polarization-induced threshold voltage shift in the Fe-FinFET is investigated by regulating the gate voltage sweep range. When the maximum positive gate to source voltage is varied from 4 V to 2 V with a fixed starting negative gate to source voltage, the threshold voltage during the backward sweep is increased from approximately −0.60 V to 1.04 V. In the case of starting negative gate to source voltage variation from −4 V to −0.5 V with a fixed maximum positive gate to source voltage of 4 V, the threshold voltage during the forward sweep is decreased from 1.66 V to 0.87 V. Those results can be elucidated with polarization domain states. Lastly, it is observed that the threshold voltage is mostly increased/decreased when the positive/negative gate voltage sweep range is smaller/larger than the positive/negative coercive voltage, respectively.

Analysis of Threshold Voltage Shift of Pentacene Field Effect Transistor Based on a Maxwell–Wagner Effect

2007 ◽  
Vol 46 (4B) ◽  
pp. 2709-2713 ◽  
Author(s):  
Ryosuke Tamura ◽  
Eunju Lim ◽  
Takaaki Manaka ◽  
Mitsumasa Iwamoto
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Effect Transistor
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