Properties of Nanocrystalline Cubic Silicon Carbide Thin Films Prepared by Hot-Wire Chemical Vapor Deposition Using SiH4/CH4/H2at Various Substrate Temperatures

2008 ◽  
Vol 47 (1) ◽  
pp. 561-565 ◽  
Author(s):  
Akimori Tabata ◽  
Yusuke Komura ◽  
Yoshiki Hoshide ◽  
Tomoki Narita ◽  
Akihiro Kondo
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cubic Silicon Carbide ◽  
Substrate Temperatures

Growth of silicon carbide thin films by hot-wire chemical vapor deposition from SiH4/CH4/H2

2009 ◽  
Vol 517 (12) ◽  
pp. 3516-3519 ◽  
Author(s):  
Akimori Tabata ◽  
Yusuke Komura ◽  
Tomoki Narita ◽  
Akihiro Kondo
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire

Annealing characteristics of Al-doped hydrogenated microcrystalline cubic silicon carbide films

2005 ◽  
Vol 862 ◽  
Author(s):  
S. Miyajima ◽  
A. Yamada ◽  
M. Konagai
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hydrogen Desorption ◽  
Hot Wire ◽  
Deposition Technique ◽  
Vapor Deposition Technique ◽  
Vacuum Atmosphere ◽  
Cubic Silicon Carbide

AbstractAluminum-doped hydrogenated microcrystalline cubic silicon carbide (μc-3C-SiC:H) films deposited by the hot wire chemical vapor deposition technique at a low substrate temperature of about 300 °C were annealed at various temperatures in vacuum atmosphere. The increase in conductivity was observed on annealing the films over 400°C. The onset of hydrogen desorption occurred in the undoped films at about 650°C, while the onset was shifted towards lower temperatures in the case of Al-doped films. These results indicate that hydrogen plays an important role on the conductivity of the Al-doped μc-3C-SiC:H films.

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