Annealing characteristics of Al-doped hydrogenated microcrystalline cubic silicon carbide films

2005 ◽  
Vol 862 ◽  
Author(s):  
S. Miyajima ◽  
A. Yamada ◽  
M. Konagai
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hydrogen Desorption ◽  
Hot Wire ◽  
Deposition Technique ◽  
Vapor Deposition Technique ◽  
Vacuum Atmosphere ◽  
Cubic Silicon Carbide

AbstractAluminum-doped hydrogenated microcrystalline cubic silicon carbide (μc-3C-SiC:H) films deposited by the hot wire chemical vapor deposition technique at a low substrate temperature of about 300 °C were annealed at various temperatures in vacuum atmosphere. The increase in conductivity was observed on annealing the films over 400°C. The onset of hydrogen desorption occurred in the undoped films at about 650°C, while the onset was shifted towards lower temperatures in the case of Al-doped films. These results indicate that hydrogen plays an important role on the conductivity of the Al-doped μc-3C-SiC:H films.

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

Microcrystalline Silicon n-i-p Solar Cells Deposited Entirely by the Hot-Wire Chemical Vapor Deposition Technique

1998 ◽  
Vol 507 ◽  
Author(s):  
Qi Wang ◽  
Eugene Iwaniczko ◽  
A. H. Mahan ◽  
D. L. Williamson
Keyword(s):  
Chemical Vapor Deposition ◽  
Solar Cell ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Hot Wire ◽  
Deposition Technique ◽  
Solar Cell Performance ◽  
Chemical Vapor Deposition Technique ◽  
Vapor Deposition Technique

ABSTRACTWe describe a series of microcrystalline (μc) silicon n-i-p solar cell devices fabricated entirely by the hot-wire chemical vapor deposition technique. These devices are deposited on flat stainless-steel at a substrate temperature below 250°C, and are evaluated using solar-cell performance and quantum-efficiency (QE) measurements. We explore the effect of crystallite size, as examined by X-ray diffraction, by varying the hydrogen-to-silane ratio from 5 to 40, while keeping the μc-n and the μc-p layers the same. We find a significant blue shift of the QE peak and an enhancement of red response compared with a standard a-Si:H solar cell. The blue shift increases with increasing hydrogen-to-silane ratio. We attribute this shift to the i-layer becoming more n-type with increasing hydrogen dilution. We also use a hydrogen gas purifier and find a large improvement in device performance.

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