Fabrication of Microcrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cell by Hot Wire Chemical Vapor Deposition

2007 ◽  
Vol 46 (1) ◽  
pp. 1-6 ◽  
Author(s):  
Chandan Banerjee ◽  
Kannan Lakshmi Narayanan ◽  
Keisuke Haga ◽  
Jaran Sritharathikhun ◽  
Shinsuke Miyajima ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Solar Cell ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Heterojunction Solar Cell ◽  
Hot Wire ◽  
Silicon Heterojunction Solar Cell ◽  
Cubic Silicon Carbide

Annealing characteristics of Al-doped hydrogenated microcrystalline cubic silicon carbide films

2005 ◽  
Vol 862 ◽  
Author(s):  
S. Miyajima ◽  
A. Yamada ◽  
M. Konagai
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hydrogen Desorption ◽  
Hot Wire ◽  
Deposition Technique ◽  
Vapor Deposition Technique ◽  
Vacuum Atmosphere ◽  
Cubic Silicon Carbide

AbstractAluminum-doped hydrogenated microcrystalline cubic silicon carbide (μc-3C-SiC:H) films deposited by the hot wire chemical vapor deposition technique at a low substrate temperature of about 300 °C were annealed at various temperatures in vacuum atmosphere. The increase in conductivity was observed on annealing the films over 400°C. The onset of hydrogen desorption occurred in the undoped films at about 650°C, while the onset was shifted towards lower temperatures in the case of Al-doped films. These results indicate that hydrogen plays an important role on the conductivity of the Al-doped μc-3C-SiC:H films.

The SiNx films process research by plasma-enhanced chemical vapor deposition in crystalline silicon solar cells

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744101 ◽  
Author(s):  
Bitao Chen ◽  
Yingke Zhang ◽  
Qiuping Ouyang ◽  
Fei Chen ◽  
Xinghua Zhan ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Solar Cell ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Double Layers ◽  
Crystalline Silicon Solar Cell

SiNx thin film has been widely used in crystalline silicon solar cell production because of the good anti-reflection and passivation effect. We can effectively optimize the cells performance by plasma-enhanced chemical vapor deposition (PECVD) method to change deposition conditions such as temperature, gas flow ratio, etc. In this paper, we deposit a new layer of SiNx thin film on the basis of double-layers process. By changing the process parameters, the compactness of thin films is improved effectively. The NH3passivation technology is augmented in a creative way, which improves the minority carrier lifetime. In sight of this, a significant increase is generated in the photoelectric performance of crystalline silicon solar cell.

Sign in / Sign up

Export Citation Format

Share Document