Performance and Reliability Improvement of HfSiON Field-Effect Transistor with Low Hafnium Concentration Cap Layer Formed by Metal Organic Chemical Vapor Deposition with Diethylsilane

Motoyuki Sato; Yasushi Nakasaki; Koji Watanabe; Tomonori Aoyama; Eiji Hasegawa; Masato Koyama; Katsuyuki Sekine; Kazuhiro Eguchi; Masaki Saito; Yoshitaka Tsunashima

doi:10.1143/jjap.47.879

Performance and Reliability Improvement of HfSiON Field-Effect Transistor with Low Hafnium Concentration Cap Layer Formed by Metal Organic Chemical Vapor Deposition with Diethylsilane

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.879 ◽

2008 ◽

Vol 47 (2) ◽

pp. 879-884 ◽

Cited By ~ 2

Author(s):

Motoyuki Sato ◽

Yasushi Nakasaki ◽

Koji Watanabe ◽

Tomonori Aoyama ◽

Eiji Hasegawa ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Organic Chemical ◽

Reliability Improvement ◽

Metal Organic ◽

Effect Transistor ◽

Organic Chemical Vapor Deposition

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Improvement in the Property of Field Effect Transistor Having the HfO2/Ge Structure Fabricated by Photoassisted Metal Organic Chemical Vapor Deposition with Fluorine Treatment

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04da11 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DA11 ◽

Cited By ~ 2

Author(s):

DongHun Lee ◽

Hideto Imajo ◽

Takeshi Kanashima ◽

Masanori Okuyama

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Effect Transistor ◽

Organic Chemical Vapor Deposition

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Improvement in the Property of Field Effect Transistor Having the HfO2/Ge Structure Fabricated by Photoassisted Metal Organic Chemical Vapor Deposition with Fluorine Treatment

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04da11 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DA11 ◽

Cited By ~ 2

Author(s):

DongHun Lee ◽

Hideto Imajo ◽

Takeshi Kanashima ◽

Masanori Okuyama

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Effect Transistor ◽

Organic Chemical Vapor Deposition

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NiO gate GaN-based enhancement-mode hetrojunction field-effect transistor with extremely low on-resistance using metal organic chemical vapor deposition regrown Ge-doped layer

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.121001 ◽

2016 ◽

Vol 55 (12) ◽

pp. 121001 ◽

Cited By ~ 11

Author(s):

Asamira Suzuki ◽

Songbeak Choe ◽

Yasuhiro Yamada ◽

Nobuyuki Otsuka ◽

Daisuke Ueda

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Organic Chemical ◽

Enhancement Mode ◽

Metal Organic ◽

Effect Transistor ◽

Organic Chemical Vapor Deposition

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A GaAs Floated Electron Channel Field Effect Transistor (FECFET) Fabricated by Selective Metal Organic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.3828 ◽

1991 ◽

Vol 30 (Part 1, No. 12B) ◽

pp. 3828-3832 ◽

Cited By ~ 5

Author(s):

Chang-Tae Kim ◽

Chang-Hee Hong ◽

Young-Se Kwon

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Organic Chemical ◽

Electron Channel ◽

Metal Organic ◽

Effect Transistor ◽

Organic Chemical Vapor Deposition

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Metal-organic chemical vapor deposition of quasi-normally-off AlGaN/GaN field-effect transistors on silicon substrates using low-temperature grown AlN cap layers

Applied Physics Letters ◽

10.1063/1.3475394 ◽

2010 ◽

Vol 97 (5) ◽

pp. 053502 ◽

Cited By ~ 6

Author(s):

S. Tan ◽

S. L. Selvaraj ◽

T. Egawa

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Organic Chemical ◽

Silicon Substrates ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Ferroelectric YMnO3 thin films grown by metal-organic chemical vapor deposition for metal/ferroelectric/semiconductor field-effect transistors

Thin Solid Films ◽

10.1016/s0040-6090(00)01803-4 ◽

2001 ◽

Vol 384 (1) ◽

pp. 146-150 ◽

Cited By ~ 33

Author(s):

Kyu-Jeong Choi ◽

Woong-Chul Shin ◽

Soon-Gil Yoon

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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A low-leakage and reduced current collapse AlGaN/GaN heterojunction field effect transistor with AlOx gate insulator formed by metal-organic chemical vapor deposition

physica status solidi (c) ◽

10.1002/pssc.200778652 ◽

2008 ◽

Vol 5 (6) ◽

pp. 1986-1988 ◽

Cited By ~ 3

Author(s):

H. Sazawa ◽

N. Nishikawa ◽

Y. Honda ◽

M. Hata ◽

S. Yagi ◽

...

Keyword(s):

Vapor Deposition ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Gate Insulator ◽

Organic Chemical ◽

Low Leakage ◽

Current Collapse ◽

Metal Organic ◽

Effect Transistor ◽

Organic Chemical Vapor Deposition

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Differences in epitaxial-layer/substrate interface properties of hetero-junction field effect transistors fabricated by molecular beam epitaxy and metal organic chemical vapor deposition

Solid-State Electronics ◽

10.1016/0038-1101(94)00224-4 ◽

1995 ◽

Vol 38 (6) ◽

pp. 1221-1226 ◽

Cited By ~ 4

Author(s):

K Kasahara ◽

K Kunihiro ◽

H Nishizawa ◽

Y Ohno

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Organic Chemical ◽

Interface Properties ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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NUMERICAL VISUALIZATION OF THERMAL FLOW STRUCTURE AND CONCENTRATION CONTOURS IN METAL ORGANIC CHEMICAL VAPOR DEPOSITION REACTORS

Journal of Flow Visualization and Image Processing ◽

10.1615/jflowvisimageproc.v7.i1.20 ◽

2000 ◽

Vol 7 (1) ◽

pp. 12

Author(s):

R. Y. Tzong ◽

C. Y. Soong

Keyword(s):

Chemical Vapor Deposition ◽

Flow Structure ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Thermal Flow ◽

Numerical Visualization ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.202170024 ◽

2021 ◽

Vol 15 (6) ◽

pp. 2170024

Author(s):

Yuxuan Zhang ◽

Zhaoying Chen ◽

Kaitian Zhang ◽

Zixuan Feng ◽

Hongping Zhao

Keyword(s):

Gallium Nitride ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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