Differences in epitaxial-layer/substrate interface properties of hetero-junction field effect transistors fabricated by molecular beam epitaxy and metal organic chemical vapor deposition

1995 ◽  
Vol 38 (6) ◽  
pp. 1221-1226 ◽  
Author(s):  
K Kasahara ◽  
K Kunihiro ◽  
H Nishizawa ◽  
Y Ohno
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Interface Properties ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

The Role of Nitrogen-Induced Localization and Defects in InGaAsN (? 2% N): Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

2001 ◽  
Vol 692 ◽  
Author(s):  
Steven R Kurtz ◽  
A. A. Allermana ◽  
J. F. Klem ◽  
R. M. Sieg ◽  
C. H. Seager ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Minority Carrier ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Carrier Diffusion ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractNitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN (≈ 1.1 eV bandgap) grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). Independent of growth technique, annealing promotes the formation of In-N bonding, and lateral carrier transport is limited by large scale (Ęmean free path ) material inhomogeneities. Comparing solar cell quantum efficiencies for devices grown by MBE and MOCVD, we find significant electron diffusion in the MBE material (reversed from the hole diffusion occurring in MOCVD material), and minority carrier diffusion in InGaAsN cannot be explained by a “universal”, nitrogen-related defect.

Sign in / Sign up

Export Citation Format

Share Document