Active-Matrix Organic Light Emission Diode Pixel Circuit for Suppressing and Compensating for the Threshold Voltage Degradation of Hydrogenated Amorphous Silicon Thin Film Transistors

Hee-Sun Shin; Won-Kyu Lee; Sang-Guen Park; Seung-Hee Kuk; Min-Koo Han

doi:10.1143/jjap.48.03b023

Active-Matrix Organic Light Emission Diode Pixel Circuit for Suppressing and Compensating for the Threshold Voltage Degradation of Hydrogenated Amorphous Silicon Thin Film Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.03b023 ◽

2009 ◽

Vol 48 (3) ◽

pp. 03B023 ◽

Cited By ~ 6

Author(s):

Hee-Sun Shin ◽

Won-Kyu Lee ◽

Sang-Guen Park ◽

Seung-Hee Kuk ◽

Min-Koo Han

Keyword(s):

Thin Film Transistors ◽

Light Emission ◽

Hydrogenated Amorphous Silicon ◽

Silicon Thin Film ◽

Active Matrix ◽

Organic Light ◽

Pixel Circuit ◽

Voltage Degradation ◽

Hydrogenated Amorphous ◽

Threshold Voltage Degradation

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Driving Method for Compensating Reliability Problem of Hydrogenated Amorphous Silicon Thin Film Transistors and Image Sticking Phenomenon in Active Matrix Organic Light-Emitting Diode Displays

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.03cc01 ◽

2011 ◽

Vol 50 (3) ◽

pp. 03CC01 ◽

Cited By ~ 2

Author(s):

Min-Seok Shin ◽

Yun-Rae Jo ◽

Oh-Kyong Kwon

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Light Emitting Diode ◽

Hydrogenated Amorphous Silicon ◽

Silicon Thin Film ◽

Active Matrix ◽

Light Emitting ◽

Organic Light Emitting Diode ◽

Organic Light ◽

Hydrogenated Amorphous

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Driving Method for Compensating Reliability Problem of Hydrogenated Amorphous Silicon Thin Film Transistors and Image Sticking Phenomenon in Active Matrix Organic Light-Emitting Diode Displays

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.03cc01 ◽

2011 ◽

Vol 50 (3S) ◽

pp. 03CC01

Author(s):

Min-Seok Shin ◽

Yun-Rae Jo ◽

Oh-Kyong Kwon

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Light Emitting Diode ◽

Hydrogenated Amorphous Silicon ◽

Silicon Thin Film ◽

Active Matrix ◽

Light Emitting ◽

Organic Light Emitting Diode ◽

Organic Light ◽

Hydrogenated Amorphous

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Recovery characteristics of threshold voltage degradation for hydrogenated amorphous silicon thin-film transistors under DC bias stresses

2016 5th International Symposium on Next-Generation Electronics (ISNE) ◽

10.1109/isne.2016.7543288 ◽

2016 ◽

Cited By ~ 2

Author(s):

Han-Wen Liu ◽

Chien-Hung Lin ◽

Fang-Hsing Wang

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Threshold Voltage ◽

Thin Film Transistors ◽

Hydrogenated Amorphous Silicon ◽

Silicon Thin Film ◽

Dc Bias ◽

Voltage Degradation ◽

Hydrogenated Amorphous ◽

Threshold Voltage Degradation

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Hysteresis phenomenon of hydrogenated amorphous silicon thin film transistors for an active matrix organic light emitting diode

Journal of Non-Crystalline Solids ◽

10.1016/j.jnoncrysol.2005.11.143 ◽

2006 ◽

Vol 352 (9-20) ◽

pp. 1719-1722 ◽

Cited By ~ 11

Author(s):

Jae-Hoon Lee ◽

Woo-Jin Nam ◽

Kwang-Sub Shin ◽

Min-Koo Han

Keyword(s):

Thin Film Transistors ◽

Light Emitting Diode ◽

Hydrogenated Amorphous Silicon ◽

Hysteresis Phenomenon ◽

Silicon Thin Film ◽

Active Matrix ◽

Light Emitting ◽

Organic Light Emitting Diode ◽

Organic Light ◽

Hydrogenated Amorphous

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Electrical Instability of Hydrogenated Amorphous Silicon Thin-Film Transistors for Active-Matrix Liquid-Crystal Displays

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.4704 ◽

1998 ◽

Vol 37 (Part 1, No. 9A) ◽

pp. 4704-4710 ◽

Cited By ~ 93

Author(s):

Chun-sung Chiang ◽

Jerzy Kanicki ◽

Kazushige Takechi

Keyword(s):

Thin Film ◽

Liquid Crystal ◽

Thin Film Transistors ◽

Hydrogenated Amorphous Silicon ◽

Liquid Crystal Displays ◽

Silicon Thin Film ◽

Active Matrix ◽

Electrical Instability ◽

Matrix Liquid ◽

Hydrogenated Amorphous

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Novel Current-Scaling Current-Mirror Hydrogenated Amorphous Silicon Thin-Film Transistor Pixel Electrode Circuit with Cascade Capacitor for Active-Matrix Organic Light-Emitting Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.1343 ◽

2007 ◽

Vol 46 (3B) ◽

pp. 1343-1349 ◽

Cited By ~ 13

Author(s):

Hojin Lee ◽

Juhn S. Yoo ◽

Chang-Dong Kim ◽

In-Jae Chung ◽

Jerzy Kanicki

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Hydrogenated Amorphous Silicon ◽

Current Mirror ◽

Silicon Thin Film ◽

Active Matrix ◽

Light Emitting ◽

Light Emitting Devices ◽

Organic Light ◽

Hydrogenated Amorphous

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Compact Decoder-Type Gate Driver Circuits with Hydrogenated Amorphous Silicon Thin Film Transistors for Active Matrix Displays

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.03bc01 ◽

2013 ◽

Vol 52 (3S) ◽

pp. 03BC01 ◽

Cited By ~ 1

Author(s):

Jong-Seok Kim ◽

Gyu-Tae Park ◽

Hyun-Woo Kim ◽

Byong-Deok Choi

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Thin Film Transistors ◽

Hydrogenated Amorphous Silicon ◽

Silicon Thin Film ◽

Active Matrix ◽

Active Matrix Displays ◽

Gate Driver ◽

Hydrogenated Amorphous

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Threshold-Voltage-Shift Compensation and Suppression Method Using Hydrogenated Amorphous Silicon Thin-Film Transistors for Large Active Matrix Organic Light-Emitting Diode Displays

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.03cd01 ◽

2012 ◽

Vol 51 (3S) ◽

pp. 03CD01 ◽

Cited By ~ 1

Author(s):

Kyonghwan Oh ◽

Oh-Kyong Kwon

Keyword(s):

Light Emitting Diode ◽

Hydrogenated Amorphous Silicon ◽

Silicon Thin Film ◽

Threshold Voltage Shift ◽

Active Matrix ◽

Light Emitting ◽

Organic Light Emitting Diode ◽

Organic Light ◽

Suppression Method ◽

Hydrogenated Amorphous

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Threshold-Voltage-Shift Compensation and Suppression Method Using Hydrogenated Amorphous Silicon Thin-Film Transistors for Large Active Matrix Organic Light-Emitting Diode Displays

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.03cd01 ◽

2012 ◽

Vol 51 ◽

pp. 03CD01

Author(s):

Kyonghwan Oh ◽

Oh-Kyong Kwon

Keyword(s):

Light Emitting Diode ◽

Hydrogenated Amorphous Silicon ◽

Silicon Thin Film ◽

Threshold Voltage Shift ◽

Active Matrix ◽

Light Emitting ◽

Organic Light Emitting Diode ◽

Organic Light ◽

Suppression Method ◽

Hydrogenated Amorphous

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A self‐consistent analysis of temperature‐dependent field‐effect measurements in hydrogenated amorphous silicon thin‐film transistors

Journal of Applied Physics ◽

10.1063/1.337407 ◽

1986 ◽

Vol 60 (2) ◽

pp. 643-649 ◽

Cited By ~ 37

Author(s):

R. E. I. Schropp ◽

J. Snijder ◽

J. F. Verwey

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Thin Film Transistors ◽

Field Effect ◽

Hydrogenated Amorphous Silicon ◽

Temperature Dependent ◽

Silicon Thin Film ◽

Self Consistent ◽

Hydrogenated Amorphous ◽

Dependent Field

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