Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-$k$ Metal–Oxide–Semiconductor Field-Effect Transistor

2011 ◽  
Vol 50 (10) ◽  
pp. 10PG02 ◽  
Author(s):  
Koji Eriguchi ◽  
Masayuki Kamei ◽  
Yoshinori Takao ◽  
Kouichi Ono
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Analytic Model ◽  
Voltage Variation ◽  
High K ◽  
Effect Transistor

Effects of varying interfacial oxide and high-k layer thicknesses for HfO2 metal–oxide–semiconductor field effect transistor

2004 ◽  
Vol 85 (7) ◽  
pp. 1286-1288 ◽  
Author(s):  
Se Jong Rhee ◽  
Chang Yong Kang ◽  
Chang Seok Kang ◽  
Rino Choi ◽  
Chang Hwan Choi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High K ◽  
Effect Transistor
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