Effects of varying interfacial oxide and high-k layer thicknesses for HfO2 metal–oxide–semiconductor field effect transistor

Applied Physics Letters ◽

10.1063/1.1773370 ◽

2004 ◽

Vol 85 (7) ◽

pp. 1286-1288 ◽

Author(s):

Se Jong Rhee ◽

Chang Yong Kang ◽

Chang Seok Kang ◽

Rino Choi ◽

Chang Hwan Choi ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Effect Transistor

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Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3521479 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01AA05 ◽

Author(s):

G. Roll ◽

S. Jakschik ◽

M. Goldbach ◽

A. Wachowiak ◽

T. Mikolajick ◽

...

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Defects ◽

High K ◽

Effect Transistor

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New insights in the passivation of high-k/InP through interface characterization and metal–oxide–semiconductor field effect transistor demonstration: Impact of crystal orientation

Journal of Applied Physics ◽

10.1063/1.4772944 ◽

2013 ◽

Vol 113 (1) ◽

pp. 013711 ◽

Author(s):

Min Xu ◽

Jiangjiang J. Gu ◽

Chen Wang ◽

D. M. Zhernokletov ◽

R. M. Wallace ◽

...

Keyword(s):

Metal Oxide ◽

Crystal Orientation ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Characterization ◽

High K ◽

Effect Transistor

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Modeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistor

Acta Physica Sinica ◽

10.7498/aps.63.237304 ◽

2014 ◽

Vol 63 (23) ◽

pp. 237304

Author(s):

Bai Yu-Rong ◽

Xu Jing-Ping ◽

Liu Lu ◽

Fan Min-Min ◽

Huang Yong ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fully Depleted ◽

High K ◽

Effect Transistor

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Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-$k$ Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.10pg02 ◽

2011 ◽

Vol 50 (10) ◽

pp. 10PG02 ◽

Author(s):

Koji Eriguchi ◽

Masayuki Kamei ◽

Yoshinori Takao ◽

Kouichi Ono

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Analytic Model ◽

Voltage Variation ◽

High K ◽

Effect Transistor

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A Numerical Investigation of Stacked Oxide Junctionless High K with Vaccum Metal Oxide Semiconductor Field Effect Transistor

Silicon ◽

10.1007/s12633-021-01029-z ◽

2021 ◽

Author(s):

S. Darwin ◽

A. Rega ◽

T. S. Arun Samuel ◽

P. Vimala

Keyword(s):

Metal Oxide ◽

Numerical Investigation ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Effect Transistor

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Ultimate vertical gate-all-around metal–oxide–semiconductor field-effect transistor and its three-dimensional integrated circuits

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106046 ◽

2021 ◽

Vol 134 ◽

pp. 106046

Author(s):

Shujun Ye ◽

Kikuo Yamabe ◽

Tetsuo Endoh

Keyword(s):

Integrated Circuits ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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A technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping

Journal of Applied Physics ◽

10.1063/5.0027214 ◽

2020 ◽

Vol 128 (24) ◽

pp. 244501

Author(s):

M. A. Anders ◽

P. M. Lenahan ◽

N. J. Harmon ◽

M. E. Flatté

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Pumping ◽

Effect Transistor

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Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-020-00181-4 ◽

2020 ◽

Vol 21 (3) ◽

pp. 339-347 ◽

Author(s):

N. P. Maity ◽

Reshmi Maity ◽

Subir Dutta ◽

Subhasish Deb ◽

K. Girija Sravani ◽

...

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Effect Transistor

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High responsivity in integrated optically controlled metal-oxide semiconductor field-effect transistor using directly bonded SiO2-InP

IEEE Photonics Technology Letters ◽

10.1109/68.605530 ◽

1997 ◽

Vol 9 (8) ◽

pp. 1143-1145 ◽

Author(s):

T. Yamagata ◽

K. Shimomura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Responsivity ◽

Effect Transistor

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Improving the accuracy of the charge-sheet model for the long-channel metal-oxide semiconductor field-effect transistor

Canadian Journal of Physics ◽

10.1139/p87-159 ◽

1987 ◽

Vol 65 (8) ◽

pp. 995-998

Author(s):

N. G. Tarr

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Inversion Layer ◽

Potential Drop ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Analytic Approximation ◽

Effect Transistor ◽

It is shown that the accuracy of the charge-sheet model for the long-channel metal-oxide-semiconductor field-effect transistor can be improved by allowing for the small potential drop across the inversion layer, and by using a more accurate analytic approximation for the charge stored in the depletion region.

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