Nanoimprinted Step-Edge Vertical-Channel Organic Transistors

2012 ◽  
Vol 51 ◽  
pp. 11PD05 ◽  
Author(s):  
Kazuhiro Kudo ◽  
Hiroshi Yamauchi ◽  
Masatoshi Sakai
Keyword(s):  
Vertical Channel ◽  
Step Edge ◽  
Organic Transistors

Fabrication of Step-Edge Vertical-Channel Organic Transistors by Selective Electro-Spray Deposition

2015 ◽  
Vol E98.C (2) ◽  
pp. 80-85
Author(s):  
Hiroshi YAMAUCHI ◽  
Shigekazu KUNIYOSHI ◽  
Masatoshi SAKAI ◽  
Kazuhiro KUDO
Keyword(s):  
Spray Deposition ◽  
Vertical Channel ◽  
Step Edge ◽  
Organic Transistors

High-Speed Operation of Step-Edge Vertical-Channel Organic Transistors with Pentacene and 6,13-Bis(triisopropyl-silylethynyl) Pentacene

2010 ◽  
Vol 49 (4) ◽  
pp. 04DK03 ◽  
Author(s):  
Kazuhiro Kudo ◽  
Tomoki Takano ◽  
Hiroshi Yamauchi ◽  
Masaaki Iizuka ◽  
Masakazu Nakamura
Keyword(s):  
High Speed ◽  
Vertical Channel ◽  
Step Edge ◽  
Organic Transistors

Nanoimprinted Step-Edge Vertical-Channel Organic Transistors

2012 ◽  
Vol 51 (11S) ◽  
pp. 11PD05 ◽  
Author(s):  
Kazuhiro Kudo ◽  
Hiroshi Yamauchi ◽  
Masatoshi Sakai
Keyword(s):  
Vertical Channel ◽  
Step Edge ◽  
Organic Transistors

High-Speed Operation of Step-Edge Vertical-Channel Organic Transistors

2009 ◽  
Author(s):  
K. Kudo ◽  
T. Takano ◽  
H. Yamauchi ◽  
M. Iizuka ◽  
M. Nakamura
Keyword(s):  
High Speed ◽  
Vertical Channel ◽  
Step Edge ◽  
Organic Transistors

High-Speed Operation of Vertical Type Organic Transistors Utilizing Step-Edge Structures

2009 ◽  
Vol 2 ◽  
pp. 071501 ◽  
Author(s):  
Tomoki Takano ◽  
Hiroshi Yamauchi ◽  
Masaaki Iizuka ◽  
Masakazu Nakamura ◽  
Kazuhiro Kudo
Keyword(s):  
High Speed ◽  
Step Edge ◽  
Organic Transistors

Vertical Channel Organic Transistors for Information Tag and Active Matrix Display Applications

2013 ◽  
Vol 38 (3) ◽  
pp. 369-372 ◽  
Author(s):  
Kazuhiro Kudo ◽  
Daisuke Tsutsumi ◽  
Hiroshi Yamauchi ◽  
Shigekazu Kuniyoshi ◽  
Masatoshi Sakai
Keyword(s):  
Vertical Channel ◽  
Organic Transistors ◽  
Active Matrix

scholarly journals Vertical Organic Permeable Dual-Base Transistors for Logic Circuits

2020 ◽  
Author(s):  
Erjuan Guo ◽  
Zhongbin Wu ◽  
Ghader Darbandy ◽  
Shen Xing ◽  
Shu-Jen Wang ◽  
...  
Keyword(s):  
Vertical Channel ◽  
Logic Circuits ◽  
Current Gain ◽  
Organic Transistors ◽  
Short Channel ◽  
Tunneling Model ◽  
New Device ◽  
Gaussian Density ◽  
Dual Gate ◽  
Dual Base

Vertical-channel organic dual-gate/base transistors would be highly interesting since vertical organic transistors are the fastest organic transistors demonstrated today. However, incorporating a dual gate/base structure into an ultra-short channel vertical architecture represents a substantial challenge. Here, we successfully realize a new device concept of vertical organic permeable dual-base transistors (OPDBTs), where either of both base electrodes can be used to change the on-currents and tune the threshold voltages. The optimized devices yield a high on-current density of 1.54 A cm-2 and a large current gain of 9.2×105, corresponding to a high transmission value of 99.998%. The detailed operation mechanisms are investigated by calibrated TCAD simulations with the Poole-Frenkel mobility model, Gaussian density of states and tunneling model. Finally, high-performance logic circuits, e.g. inverter, NAND/AND computation functions are demonstrated with one single OPDBT operating at supply voltages of < 2.0 V. We believe that OPDBTs offer a compact and technologically simple hardware platform with excellent application potential for vertical-channel organic transistors in complex logic circuits.

Fabrication of n- and p-channel step-edge vertical-channel transistors by electrospray deposition

2013 ◽  
Vol 53 (1S) ◽  
pp. 01AB16 ◽  
Author(s):  
Hiroshi Yamauchi ◽  
Masatoshi Sakai ◽  
Shigekazu Kuniyoshi ◽  
Kazuhiro Kudo
Keyword(s):  
Vertical Channel ◽  
Step Edge ◽  
Electrospray Deposition

scholarly journals Vertical organic permeable dual-base transistors for logic circuits

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Erjuan Guo ◽  
Zhongbin Wu ◽  
Ghader Darbandy ◽  
Shen Xing ◽  
Shu-Jen Wang ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vertical Channel ◽  
Logic Gates ◽  
Logic Circuits ◽  
Organic Transistors ◽  
Short Channel ◽  
Power Efficient ◽  
Threshold Voltages ◽  
Dual Gate ◽  
Dual Base

Abstract The main advantage of organic transistors with dual gates/bases is that the threshold voltages can be set as a function of the applied second gate/base bias, which is crucial for the application in logic gates and integrated circuits. However, incorporating a dual gate/base structure into an ultra-short channel vertical architecture represents a substantial challenge. Here, we realize a device concept of vertical organic permeable dual-base transistors, where the dual base electrodes can be used to tune the threshold voltages and change the on-currents. The detailed operation mechanisms are investigated by calibrated TCAD simulations. Finally, power-efficient logic circuits, e.g. inverter, NAND/AND computation functions are demonstrated with one single device operating at supply voltages of <2.0 V. We believe that this work offers a compact and technologically simple hardware platform with excellent application potential for vertical-channel organic transistors in complex logic circuits.

Vertical Channel Organic Transistors for Information Tag Applications

2013 ◽  
Vol E96.C (3) ◽  
pp. 340-343 ◽  
Author(s):  
Kazuhiro KUDO ◽  
Shigekazu KUNIYOSHI ◽  
Hiroshi YAMAUCHI ◽  
Masaaki IIZUKA ◽  
Masatoshi SAKAI
Keyword(s):  
Vertical Channel ◽  
Organic Transistors
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