High-Speed Operation of Vertical Type Organic Transistors Utilizing Step-Edge Structures

2009 ◽  
Vol 2 ◽  
pp. 071501 ◽  
Author(s):  
Tomoki Takano ◽  
Hiroshi Yamauchi ◽  
Masaaki Iizuka ◽  
Masakazu Nakamura ◽  
Kazuhiro Kudo
Keyword(s):  
High Speed ◽  
Step Edge ◽  
Organic Transistors

High-Speed Operation of Step-Edge Vertical-Channel Organic Transistors with Pentacene and 6,13-Bis(triisopropyl-silylethynyl) Pentacene

2010 ◽  
Vol 49 (4) ◽  
pp. 04DK03 ◽  
Author(s):  
Kazuhiro Kudo ◽  
Tomoki Takano ◽  
Hiroshi Yamauchi ◽  
Masaaki Iizuka ◽  
Masakazu Nakamura
Keyword(s):  
High Speed ◽  
Vertical Channel ◽  
Step Edge ◽  
Organic Transistors

High-Speed Operation of Step-Edge Vertical-Channel Organic Transistors

2009 ◽  
Author(s):  
K. Kudo ◽  
T. Takano ◽  
H. Yamauchi ◽  
M. Iizuka ◽  
M. Nakamura
Keyword(s):  
High Speed ◽  
Vertical Channel ◽  
Step Edge ◽  
Organic Transistors

Fabrication of Step-Edge Vertical-Channel Organic Transistors by Selective Electro-Spray Deposition

2015 ◽  
Vol E98.C (2) ◽  
pp. 80-85
Author(s):  
Hiroshi YAMAUCHI ◽  
Shigekazu KUNIYOSHI ◽  
Masatoshi SAKAI ◽  
Kazuhiro KUDO
Keyword(s):  
Spray Deposition ◽  
Vertical Channel ◽  
Step Edge ◽  
Organic Transistors

Variations in Atomic-Scale Step Edge Structures and Dynamics of Dissolving Calcite in Water Revealed by High-Speed Frequency Modulation Atomic Force Microscopy

2019 ◽  
Vol 123 (32) ◽  
pp. 19786-19793 ◽  
Author(s):  
Kazuki Miyata ◽  
Yuta Kawagoe ◽  
John Tracey ◽  
Keisuke Miyazawa ◽  
Adam S. Foster ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Frequency Modulation ◽  
High Speed ◽  
Step Edge ◽  
Atomic Scale ◽  
Force Microscopy ◽  
Atomic Force ◽  
Scale Step

High-speed organic transistors fabricated using a novel hybrid-printing technique

2011 ◽  
Vol 12 (7) ◽  
pp. 1120-1125 ◽  
Author(s):  
Huai-Yuan Tseng ◽  
Balaji Purushothaman ◽  
John Anthony ◽  
Vivek Subramanian
Keyword(s):  
High Speed ◽  
Organic Transistors ◽  
Printing Technique ◽  
Hybrid Printing

Large Area Printing of Organic Transistors via a High Throughput Dry Process

2002 ◽  
Vol 736 ◽  
Author(s):  
Graciela B. Blanchet ◽  
Yueh-Lin Loo ◽  
J. A. Rogers ◽  
F. Gao ◽  
C. R. Fincher
Keyword(s):  
High Speed ◽  
Electrical Performance ◽  
Organic Transistors ◽  
Electronic Systems ◽  
Large Area ◽  
Additive Process ◽  
Organic Electronic ◽  
Dry Process ◽  
Thermal Transfer ◽  
Expected Benefits

Organic electronic systems offer the advantage of low weight and flexibility at potentially lower cost. Although the fabrication of functioning plastic transistors using approaches such as ink jet, lithography and stamping has been described i1–3, chemically compatible materials that allow for the sequential application of liquid layers is a technical barrier. Material issues maybe the Achilles heel of ultimately printing organic electronic devices as newspapers today, at high speeds and in a reel to reel process. We introduce a novel process–thermal transfer–a non-lithographic technique that enables printing multiple, successive layers via a dry additive process. This method is capable of patterning a range of organic materials at high speed over large areas with micron size resolution and excellent electrical performance. Such a dry, potentially reel-to-reel printing method may provide a practical route to realizing the expected benefits of plastics for electronics. We illustrate the viability of thermal transfer and the ability to develop suitable printable organics conductors by fabricating a functioning 4000 cm2 transistor array.

High-speed organic transistors with three-dimensional organic channels and organic rectifiers based on them operating above 20MHz

2015 ◽  
Vol 20 ◽  
pp. 119-124 ◽  
Author(s):  
Mayumi Uno ◽  
Bu-Sung Cha ◽  
Yusuke Kanaoka ◽  
Jun Takeya
Keyword(s):  
High Speed ◽  
Three Dimensional ◽  
Organic Transistors

Nanoimprinted Step-Edge Vertical-Channel Organic Transistors

2012 ◽  
Vol 51 ◽  
pp. 11PD05 ◽  
Author(s):  
Kazuhiro Kudo ◽  
Hiroshi Yamauchi ◽  
Masatoshi Sakai
Keyword(s):  
Vertical Channel ◽  
Step Edge ◽  
Organic Transistors

Field Effect Transistors of BTQBT and its Derivatives

2002 ◽  
Vol 725 ◽  
Author(s):  
Masaki Takada ◽  
Yoshiro Yamashita ◽  
Hirokazu Tada
Keyword(s):  
Field Effect ◽  
High Speed ◽  
Room Temperature ◽  
Film Growth ◽  
Field Effect Transistors ◽  
Growth Conditions ◽  
Organic Transistors ◽  
Semiconducting Material ◽  
P Type

AbstractWe have prepared and characterized thin film field effect transistors (FETs) of bis-(1, 2, 5-thiadiazolo)-p-quinobis(1, 3-dithiole) (BTQBT) and its derivatives. Preparation and characterization of the films were carried out under ultrahigh vacuum condition. Most materials examined showed p-type semiconducting behaviors. Among p-type molecules, BTQBT films deposited at room temperature showed the highest mobility and on/off ratio of 0.2 cm2/Vs and 108, respectively, at optimal film growth conditions. These performances are almost comparable to those of pentacene and polythiophene thin films, indicating that BTQBT molecule is a prominent semiconducting material for high-speed organic transistors. It was also found that a tetracyanoquinodimethane (TCNQ) derivative showed an n-type semiconducting behavior with an electron mobility of 8.9 x 10-4 cm2/Vs.

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