High-Speed Operation of Vertical Type Organic Transistors Utilizing Step-Edge Structures

Organic electronic systems offer the advantage of low weight and flexibility at potentially lower cost. Although the fabrication of functioning plastic transistors using approaches such as ink jet, lithography and stamping has been described i1–3, chemically compatible materials that allow for the sequential application of liquid layers is a technical barrier. Material issues maybe the Achilles heel of ultimately printing organic electronic devices as newspapers today, at high speeds and in a reel to reel process. We introduce a novel process–thermal transfer–a non-lithographic technique that enables printing multiple, successive layers via a dry additive process. This method is capable of patterning a range of organic materials at high speed over large areas with micron size resolution and excellent electrical performance. Such a dry, potentially reel-to-reel printing method may provide a practical route to realizing the expected benefits of plastics for electronics. We illustrate the viability of thermal transfer and the ability to develop suitable printable organics conductors by fabricating a functioning 4000 cm2 transistor array.

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High-speed organic transistors with three-dimensional organic channels and organic rectifiers based on them operating above 20MHz

Organic Electronics ◽

10.1016/j.orgel.2015.02.005 ◽

2015 ◽

Vol 20 ◽

pp. 119-124 ◽

Cited By ~ 42

Author(s):

Mayumi Uno ◽

Bu-Sung Cha ◽

Yusuke Kanaoka ◽

Jun Takeya

Keyword(s):

High Speed ◽

Three Dimensional ◽

Organic Transistors

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Nanoimprinted Step-Edge Vertical-Channel Organic Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.11pd05 ◽

2012 ◽

Vol 51 ◽

pp. 11PD05 ◽

Cited By ~ 4

Author(s):

Kazuhiro Kudo ◽

Hiroshi Yamauchi ◽

Masatoshi Sakai

Keyword(s):

Vertical Channel ◽

Step Edge ◽

Organic Transistors

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Dimensional scaling of high-speed printed organic transistors enabling high-frequency operation

Flexible and Printed Electronics ◽

10.1088/2058-8585/ab739a ◽

2020 ◽

Vol 5 (1) ◽

pp. 014013

Author(s):

Gerd Grau ◽

Vivek Subramanian

Keyword(s):

High Frequency ◽

High Speed ◽

Organic Transistors ◽

Dimensional Scaling ◽

High Frequency Operation

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Field Effect Transistors of BTQBT and its Derivatives

MRS Proceedings ◽

10.1557/proc-725-p10.6 ◽

2002 ◽

Vol 725 ◽

Cited By ~ 3

Author(s):

Masaki Takada ◽

Yoshiro Yamashita ◽

Hirokazu Tada

Keyword(s):

Field Effect ◽

High Speed ◽

Room Temperature ◽

Film Growth ◽

Field Effect Transistors ◽

Growth Conditions ◽

Organic Transistors ◽

Semiconducting Material ◽

P Type

AbstractWe have prepared and characterized thin film field effect transistors (FETs) of bis-(1, 2, 5-thiadiazolo)-p-quinobis(1, 3-dithiole) (BTQBT) and its derivatives. Preparation and characterization of the films were carried out under ultrahigh vacuum condition. Most materials examined showed p-type semiconducting behaviors. Among p-type molecules, BTQBT films deposited at room temperature showed the highest mobility and on/off ratio of 0.2 cm2/Vs and 108, respectively, at optimal film growth conditions. These performances are almost comparable to those of pentacene and polythiophene thin films, indicating that BTQBT molecule is a prominent semiconducting material for high-speed organic transistors. It was also found that a tetracyanoquinodimethane (TCNQ) derivative showed an n-type semiconducting behavior with an electron mobility of 8.9 x 10-4 cm2/Vs.

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