Grain growth and the lifetime of diffusion creep deformation

2011 ◽  
Vol 360 (1) ◽  
pp. 257-272 ◽  
Author(s):  
Mark A. Pearce ◽  
John Wheeler
2020 ◽  
Vol 9 (5) ◽  
pp. 544-557
Author(s):  
Bo Feng ◽  
Zhenhang Wang ◽  
Yunhao Fan ◽  
Jinghua Gu ◽  
Yue Zhang

Abstract ZrB2-SiBCN ceramics with ZrO2 additive are hot-pressed under a constant applied pressure. The densification behavior of the composites is studied in a view of creep deformation by means of the Bernard-Granger and Guizard model. With determination of the stress exponent (n) and the apparent activation energy (Qd), the specific deformation mechanisms controlling densification are supposed. Within lower temperature ranges of 1300–1400 °C, the operative mechanism is considered to be grain boundary sliding accommodated by atom diffusion of the polymer-derived SiBCN (n = 1, Qd = 123±5 kJ/mol) and by viscous flow of the amorphous SiBCN (n = 2, Qd = 249±5 kJ/mol). At higher temperatures, the controlling mechanism transforms to lattice or intra-granular diffusion creep (n = 3–5) due to gradual consumption of the amorphous phase. It is suggested that diffusion of oxygen ions inside ZrO2 into the amorphous SiBCN decreases the viscosity, modifies the fluidity, and contributes to the grain boundary mobility.


2004 ◽  
Vol 467-470 ◽  
pp. 1283-1288
Author(s):  
Yuri Estrin ◽  
Günter Gottstein ◽  
Lasar S. Shvindlerman

Diffusion controlled creep in nanostructured materials is considered for the case when grain growth occurs concurrently. The Nabarro-Herring and Coble mechanisms that would predict creep rate reduction are re-considered to include the effect of grain-growth induced vacancy generation. It is shown that under such conditions creep is accelerated during an initial stage of grain growth as compared to the case of constant grain size. This creep enhancement stage is followed by a period of reduced creep rate. The predicted strain rate behaviour resembles primary and secondary creep.


1996 ◽  
Vol 428 ◽  
Author(s):  
O. V. Kononenko ◽  
V. N. Matveev

AbstractVoid and hillock formation during annealing was studied depending on the deposition conditions. Aluminum films were deposited onto oxidized silicon substrates by the self-ion assisted technique. The bias 0 or 6 kV was applied to the substrate during deposition. The films were then annealed in vacuum for 1 hour in the temperature range from 1500 to 550°C. The structure of the films was investigated by transmission electron microscopy.It was found that recrystallization and void and hillock formation in the films depend on the bias during deposition. Normal grain growth occurred in the films deposited without bias. Abnormal grain growth was observed in the 6 kV-films. It was also found that the mechanism of stress relaxation during thermal cycling depends on the self-ion bombardment. In the films prepared without bias, stress relaxation proceeds by diffusion creep. In the films deposited at the 6 kV bias, stress relaxation proceeds by plastic deformation.


2004 ◽  
Vol 52 (7) ◽  
pp. 1971-1987 ◽  
Author(s):  
A.J. Haslam ◽  
V. Yamakov ◽  
D. Moldovan ◽  
D. Wolf ◽  
S.R. Phillpot ◽  
...  

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