Relationship Between The Void And Hillock Formation And The Grain Growth In Thin Aluminum Films

1996 ◽  
Vol 428 ◽  
Author(s):  
O. V. Kononenko ◽  
V. N. Matveev
Keyword(s):  
Stress Relaxation ◽  
Grain Growth ◽  
The Self ◽  
Diffusion Creep ◽  
Silicon Substrates ◽  
Aluminum Films ◽  
Bias Stress ◽  
Transmission Electron ◽  
Thin Aluminum ◽  
Hillock Formation

AbstractVoid and hillock formation during annealing was studied depending on the deposition conditions. Aluminum films were deposited onto oxidized silicon substrates by the self-ion assisted technique. The bias 0 or 6 kV was applied to the substrate during deposition. The films were then annealed in vacuum for 1 hour in the temperature range from 1500 to 550°C. The structure of the films was investigated by transmission electron microscopy.It was found that recrystallization and void and hillock formation in the films depend on the bias during deposition. Normal grain growth occurred in the films deposited without bias. Abnormal grain growth was observed in the 6 kV-films. It was also found that the mechanism of stress relaxation during thermal cycling depends on the self-ion bombardment. In the films prepared without bias, stress relaxation proceeds by diffusion creep. In the films deposited at the 6 kV bias, stress relaxation proceeds by plastic deformation.

Relationship Between The Void and Hillock Formation and The Grain Growth in Thin Aluminum Films

1996 ◽  
Vol 436 ◽  
Author(s):  
O. V. Kononenko ◽  
V. N. Matveev
Keyword(s):  
Stress Relaxation ◽  
Grain Growth ◽  
The Self ◽  
Diffusion Creep ◽  
Aluminum Films ◽  
Bias Stress ◽  
Transmission Electron ◽  
Hillock Formation ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes

AbstractVoid and hillock formation during annealing was studied depending on the deposition conditions. Aluminum films were deposited onto oxidized silicon substrates by the self-ion assisted technique. The bias 0 or 6 kV was applied to the substrate during deposition. The films were then annealed in vacuum for 1 hour in the temperature range from 150° to 550°C. The structure of the films was investigated by transmission electron microscopy. The void and hillock formation was studied with optical and scanning electron microscopes.It was found that recrystallization and void and hillock formation in the films depend on the bias during deposition. Normal grain growth occurred in the films deposited without bias. Abnormal grain growth was observed in the 6 kV-films. It was also found that the mechanism of stress relaxation during thermal cycling depends on the self-ion bombardment. In the films prepared without bias, stress relaxation proceeds by diffusion creep. In the films deposited at the 6 kV bias, stress relaxation proceeds by plastic deformation.

Real Time Observations of Dislocation-Mediated Plasticity in the Epitaxial AI (011)/Si(100) Thin Film System

2000 ◽  
Vol 619 ◽  
Author(s):  
Eric A. Stach ◽  
U. Dahmen ◽  
W.D. Nix
Keyword(s):  
Strain Relaxation ◽  
Experimental Studies ◽  
Dislocation Motion ◽  
Metal Films ◽  
Silicon Substrates ◽  
Thermally Induced ◽  
Aluminum Films ◽  
Transmission Electron ◽  
Thin Aluminum

ABSTRACTDespite numerous theoretical and experimental studies of strain relaxation in metal films on silicon substrates, the exact mechanisms by which dislocations mediate plasticity in these structures are not well understood. To elucidate these mechanisms, we present results from in-situ transmission electron microscopy annealing of thin aluminum films grown on Si (100). As a model system, we have chosen to focus on aluminum films which contain two (011) epitaxial variants with respect to the silicon substrate. In this paper we discuss our observations of the glide and climb behavior of dislocations in these structures during thermal cycling. These observations give qualitative insight into the mechanisms by which dislocation motion accommodates thermally induced strains in thin metal films.

Measurement of Stress Relaxation in Thin Aluminum Metallizations by Continuous Indentation and X-Ray Techniques

1990 ◽  
Vol 188 ◽  
Author(s):  
M. A. Korhonen ◽  
W. R. LaFontaine ◽  
C. A. Paszkiet ◽  
R. D. Black ◽  
Che-Yu Li
Keyword(s):  
Stress Relaxation ◽  
Integrated Circuit ◽  
Inert Atmosphere ◽  
Aluminum Film ◽  
Silicon Substrates ◽  
Aluminum Films ◽  
X Ray ◽  
Heat Treated ◽  
Thin Aluminum ◽  
Continuous Indentation

ABSTRACTThin aluminum films deposited on silicon substrates are representative of materials systems used in integrated circuit technology. Large stresses in such systems usually arise from thermal expansion mismatch between the thin film and the substrate, and constitute an important reliability concern.X-ray and continuous indentation testing were used to measure post-heat treatment stresses in a 0.3 μm thick aluminum film on a silicon substrate. The sample was heat treated at 450°C for one hour in an inert atmosphere, after which the stress relaxation was followed as a function of time. The stress data gathered by the two techniques agree very closely during a time span of about 100 hours.

The Effect of Tungsten on the Nucleation and Growth of thin Aluminum Alloy Films

1993 ◽  
Vol 317 ◽  
Author(s):  
Bea CAO ◽  
N. David Theodore ◽  
Hank Shin ◽  
Peter Fejes ◽  
Les Hendrickson
Keyword(s):  
Electron Microscopy ◽  
Mechanical Properties ◽  
Scanning Electron Microscopy ◽  
Nucleation And Growth ◽  
Growth Behavior ◽  
Aluminum Films ◽  
Surface Energies ◽  
Transmission Electron ◽  
Thin Aluminum ◽  
Scanning Electron

ABSTRACTA variety of alloying elements are currently being investigated for their effects on the mechanical properties and reliability of thin aluminum films. In the present study, scanning electron microscopy and transmission electron microscopy are used to study the nucleation and growth of Al-1.5wt%Cu and Al-1.5wt% Cu-0.2wt% W films. Differences in Microstructure, nucleation and growth behavior are observed and are explained in terms of changes in surface energies and atomic Mobilities.

Anelasticity and Damping of Thin Aluminum Films on Silicon Substrates

2004 ◽  
Vol 13 (2) ◽  
pp. 230-237 ◽  
Author(s):  
D. Choi ◽  
H. Kim ◽  
W.D. Nix
Keyword(s):  
Silicon Substrates ◽  
Aluminum Films ◽  
Thin Aluminum

Observation of grain superstructure in thin aluminum films by orientation imaging microscopy

1995 ◽  
Vol 53 ◽  
pp. 436-437
Author(s):  
Roger Alvis ◽  
David Dingley ◽  
David Field
Keyword(s):  
Aluminum Alloy ◽  
Orientation Imaging Microscopy ◽  
Test Structure ◽  
Al Alloy ◽  
X Ray Diffraction ◽  
Aluminum Films ◽  
Orientation Imaging ◽  
Reliability Parameters ◽  
Transmission Electron ◽  
Thin Aluminum

The correlation of aluminum alloy reliability data to microstructure has long been the goal of those scientists seeking to model electromigration behavior of interconnects. Traditionally, microstructural information has been acquired through x-ray diffraction , and transmission electron microscopy (TEM). However, each of these techniques is capable of delivering only part of the characterization whole. We describe the application of orientation imaging microscopy (OIM) to thin aluminum alloy films and demonstrate its versatility in providing the key microstructural reliability parameters: namely texture and grain size, as well as providing insight to the microstructure of grain boundaries.OIM was performed on an electromigration test structure (figure 1). The Al-alloy was deposited on titanium and capped with an anti-reflective titanium nitride. Subsequently, the test structure was patterned and capped with a multilayer blanket consisting of silicon nitride (SiN), and SiO2. The structure was annealed after the SOG deposition at 450° C for 90 minutes, seeing no electrical stressing. The die was removed from the package and deprocessed before the OIM was acquired.

Local stress relaxation phenomena in thin aluminum films

1991 ◽  
Vol 9 (4) ◽  
pp. 2527-2535 ◽  
Author(s):  
Ulf Smith ◽  
Nils Kristensen ◽  
Fredric Ericson ◽  
Jan‐Åke Schweitz
Keyword(s):  
Stress Relaxation ◽  
Local Stress ◽  
Relaxation Phenomena ◽  
Aluminum Films ◽  
Thin Aluminum

Grain Growth in Titanium Silicide Films During the Formation Reaction

1990 ◽  
Vol 202 ◽  
Author(s):  
Yunji L. Corcoran ◽  
Alexander H. King ◽  
Nimal deLanerolle ◽  
Bonggi Kim ◽  
John Berg
Keyword(s):  
Growth Rate ◽  
Grain Growth ◽  
Cross Section ◽  
Titanium Silicide ◽  
Silicon Substrates ◽  
Experimental Conditions ◽  
Silicide Layer ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Relationship Of

ABSTRACTTitanium films of 0.5 µm thickness were sputter deposited on silicon substrates. After rapid thermal annealing at temperatures ranging from 600°C to 850°C for times up to 45 seconds in nitrogen, transmission electron microscope (TEM) cross section specimens were made from the wafers. Grain sizes of the resulting titanium disilicide were measured from TEM cross section micrographs. The results show that C49-TiSi2 has a different grain growth rate than C54-TiSi2- Under our experimental conditions, C54-TiSi2 has a much higher growth rate. Titanium silicide on arsenic implanted silicon substrates shows a lower grain growth rate than that on unimplanted substrates under the same conditions. The thickness of the silicide layer was also measured for each specimen. The relationship of thickness and grain size will be discussed.

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