Ultrathin Diffusion Barriers/Liners for Gigascale Copper Metallization

2000 ◽  
Vol 30 (1) ◽  
pp. 363-385 ◽  
Author(s):  
A. E. Kaloyeros ◽  
E. Eisenbraun
Keyword(s):  
Diffusion Barriers ◽  
Copper Metallization

Optimization of Copper Top-Side Metallization for High Performance SiC-Devices

2013 ◽  
Vol 740-742 ◽  
pp. 801-804 ◽  
Author(s):  
Tim Behrens ◽  
Thomas Suenner ◽  
Eckart Geinitz ◽  
Andreas Schletz ◽  
Lothar Frey
Keyword(s):  
Leakage Current ◽  
High Performance ◽  
High Reliability ◽  
Diffusion Barriers ◽  
Copper Layer ◽  
Copper Metallization ◽  
Adhesion Promoters ◽  
Peel Tests

While aluminum-based metallization schemes on Si have been optimized for the last decades, only few investigations have been done on copper metallization with SiC-devices. Thus, in this work the mechanical as well as the electrical interactions of this metallization system have been analyzed and optimized for SiC-devices in high reliability applications. For optimizing the adhesion of the copper metallization stack on SiC devices, different metallization schemes consisting of adhesion promoters (Ti, Cr, Al, Ta, WTi), diffusion barriers (TiN, Ta, WTi), and the final copper layer have been tested by peel-tests. For investigating the electrical interactions TLM measurements as well as leakage-current measurements have been done on copper metalized SiC samples.

Effect of annealing on the microstructure of ultrathin tungsten nitride diffusion barriers for copper metallization

2002 ◽  
Vol 64 (1-4) ◽  
pp. 269-277 ◽  
Author(s):  
M Hecker ◽  
R Hübner ◽  
R Ecke ◽  
S Schulz ◽  
H.-J Engelmann ◽  
...  
Keyword(s):  
Diffusion Barriers ◽  
Copper Metallization ◽  
Tungsten Nitride

Chemical Vapor Deposition of Cr-Based Thin Films as Diffusion Barriers in Copper Metallization

2003 ◽  
Vol 426-432 ◽  
pp. 3439-3444
Author(s):  
Francis Maury ◽  
C. Gasquères ◽  
F.-D. Duminica ◽  
F. Ossola
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diffusion Barriers ◽  
Copper Metallization

Diffusion Barriers for Copper Metallization: Predicting Phase Stability and Reactivity using Equilibrium Thermodynamics

1999 ◽  
Vol 564 ◽  
Author(s):  
C. E. Ramberg ◽  
E. Blanquet ◽  
M. Pons ◽  
V. Ghetta ◽  
C. Bernard ◽  
...  
Keyword(s):  
Experimental Study ◽  
Thermodynamic Equilibrium ◽  
Phase Stability ◽  
Binary Systems ◽  
Amorphous Material ◽  
Electronic Conductivity ◽  
Diffusion Barriers ◽  
Copper Metallization ◽  
Equilibrium Thermodynamics ◽  
Preliminary Results

AbstractThe guidelines for designing a conductive, amorphous material, capable of thermodynamic equilibrium with copper, are defined using readily available thermodynamic information. The tradeoff between desired properties – equilibrium at the interfaces, amorphous microstructure, and electronic conductivity – are described, along with trends in relevant binary systems that result in these properties. These guidelines defined systems for experimental study, for which preliminary results are presented.

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