Comparative Study of Biaxial and Uniaxial Mechanical Stress Influence on the Low Frequency Noise of Fully Depleted SOI nMOSFETs Operating in Triode and Saturation Regime

2012 ◽  
Vol 49 (1) ◽  
pp. 77-83
Author(s):  
M. A. S. de Souza ◽  
R. T. Doria ◽  
M. de Souza ◽  
J. A. Martino ◽  
M. A. Pavanello
Keyword(s):  
Comparative Study ◽  
Mechanical Stress ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Saturation Regime ◽  
Fully Depleted ◽  
Stress Influence

Comparative Study of Active-Over-Metal and Metal-Over-Active Amorphous IGZO Thin-Film Transistors With Low-Frequency Noise Measurements

2012 ◽  
Vol 33 (4) ◽  
pp. 555-557 ◽  
Author(s):  
Andreas Tsormpatzoglou ◽  
Nikolaos A. Hastas ◽  
Shahrukh Khan ◽  
Miltiadis Hatalis ◽  
Charalabos A. Dimitriadis
Keyword(s):  
Thin Film ◽  
Comparative Study ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Measurements

Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics

2006 ◽  
Vol 53 (4) ◽  
pp. 823-828 ◽  
Author(s):  
Gino Giusi ◽  
F. Crupi ◽  
C. Pace ◽  
C. Ciofi ◽  
G. Groeseneken
Keyword(s):  
Comparative Study ◽  
Gate Dielectrics ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

Low-frequency noise in near-fully-depleted TFSOI MOSFETs

1998 ◽  
Vol 19 (2) ◽  
pp. 40-43 ◽  
Author(s):  
J.A. Babcock ◽  
D.K. Schroder ◽  
Ying-Che Tseng
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Fully Depleted

scholarly journals Origin of the Low-Frequency Noise in the Asymmetric Self-Cascode Structure Composed by Fully Depleted SOI nMOSFETs

2017 ◽  
Vol 12 (2) ◽  
pp. 62-70
Author(s):  
Rafael Assalti ◽  
Rodrigo T. Doria ◽  
Denis Flandre ◽  
Michelly De Souza
Keyword(s):  
Spectral Density ◽  
Gate Voltage ◽  
Low Frequency ◽  
Drain Current ◽  
Current Noise ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectral Density ◽  
Fully Depleted ◽  
Self Cascode

In this paper the origin of low-frequency noise in the Asymmetric Self-Cascode (A-SC) structure composed by Fully Depleted SOI nMOSFETs is investigated through experimental results. It is shown that the predominant noise source of the A-SC structure is linked to carrier number fluctuations, being governed by the noise generated in the transistor near the source. Larger channel doping concentrations degrade the quality of the Si-SiO2 interface and the gate oxide, which causes an increase of the normalized drain current noise spectral density, just as the reduction of the gate voltage overdrive, since there are few carriers in the channel. The A-SC structures have showed higher noise compared with single transistors. In saturation regime, the increase of the gate voltage overdrive has incremented the corner frequency, shifting the g-r noise to higher frequencies. Besides that, the normalized noise has been significantly increased when compared with the linear regime due to the rise of the drain current noise spectral density.

Low frequency noise of AlGaN/GaN MODFETs: A comparative study of surface, barrier and heterointerface effects

2005 ◽  
Vol 49 (8) ◽  
pp. 1352-1360 ◽  
Author(s):  
Pouya Valizadeh ◽  
Dimitris Pavlidis ◽  
Kenji Shiojima ◽  
Takashi Makimura ◽  
Naoteru Shigekawa
Keyword(s):  
Comparative Study ◽  
Low Frequency ◽  
Surface Barrier ◽  
Frequency Noise ◽  
Low Frequency Noise

High gate voltage drain current leveling off and its low-frequency noise in 65nm fully-depleted strained and non-strained SOI nMOSFETs

2008 ◽  
Vol 52 (5) ◽  
pp. 801-807 ◽  
Author(s):  
N. Lukyanchikova ◽  
N. Garbar ◽  
V. Kudina ◽  
A. Smolanka ◽  
M. Lokshin ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Low Frequency ◽  
Drain Current ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Fully Depleted
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