Low frequency noise of AlGaN/GaN MODFETs: A comparative study of surface, barrier and heterointerface effects

2005 ◽  
Vol 49 (8) ◽  
pp. 1352-1360 ◽  
Author(s):  
Pouya Valizadeh ◽  
Dimitris Pavlidis ◽  
Kenji Shiojima ◽  
Takashi Makimura ◽  
Naoteru Shigekawa
Keyword(s):  
Comparative Study ◽  
Low Frequency ◽  
Surface Barrier ◽  
Frequency Noise ◽  
Low Frequency Noise

Comparative Study of Active-Over-Metal and Metal-Over-Active Amorphous IGZO Thin-Film Transistors With Low-Frequency Noise Measurements

2012 ◽  
Vol 33 (4) ◽  
pp. 555-557 ◽  
Author(s):  
Andreas Tsormpatzoglou ◽  
Nikolaos A. Hastas ◽  
Shahrukh Khan ◽  
Miltiadis Hatalis ◽  
Charalabos A. Dimitriadis
Keyword(s):  
Thin Film ◽  
Comparative Study ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Measurements

Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics

2006 ◽  
Vol 53 (4) ◽  
pp. 823-828 ◽  
Author(s):  
Gino Giusi ◽  
F. Crupi ◽  
C. Pace ◽  
C. Ciofi ◽  
G. Groeseneken
Keyword(s):  
Comparative Study ◽  
Gate Dielectrics ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

Comparative study of bias-reversing schemes for low frequency noise reduction in dc SQUIDS

1994 ◽  
Vol 194-196 ◽  
pp. 89-90 ◽  
Author(s):  
J.M. Lockhart ◽  
D.N. Hipkins ◽  
G.M. Gutt ◽  
B. Muhlfelder ◽  
N. Jennerjohn
Keyword(s):  
Comparative Study ◽  
Noise Reduction ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

LOW FREQUENCY NOISE IN CMOS TRANSISTORS: AN EXPERIMENTAL AND COMPARATIVE STUDY ON DIFFERENT TECHNOLOGIES

2001 ◽  
Vol 01 (04) ◽  
pp. L233-L238 ◽  
Author(s):  
PAOLO FANTINI ◽  
LORIS VENDRAME ◽  
DAMIANO RICCARDI
Keyword(s):  
Experimental Data ◽  
Comparative Study ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Broad Group ◽  
Cmos Transistors ◽  
Silicon Cmos

In this work, we experimentally investigate fundamental aspects of 1/f noise in silicon CMOS transistors, considering a broad group of technological families. We bring out some device down-scaling issues. A direct comparison between our experimental data and the noise dominant theories in MOS-FETs is dealt with.

Comparative study of low-frequency noise in 0.18μm and 0.35μm gate-length nMOSFETs with gate area of 1.1μm2

2016 ◽  
Vol 60 ◽  
pp. 10-15 ◽  
Author(s):  
Chih-Chan Hu ◽  
Yuan-Fong Chou Chau ◽  
Chee Ming Lim ◽  
Kuang-Hsiung Tan
Keyword(s):  
Comparative Study ◽  
Low Frequency ◽  
Frequency Noise ◽  
Gate Length ◽  
Low Frequency Noise

Comparative study of low frequency noise and hot-carrier reliability in SiGe PD SOI pMOSFETs

2008 ◽  
Vol 254 (19) ◽  
pp. 6190-6193
Author(s):  
Sang-Sik Choi ◽  
A-Ram Choi ◽  
Jeon-Wook Yang ◽  
Yong-Woo Hwang ◽  
Deok Ho Cho ◽  
...  
Keyword(s):  
Comparative Study ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Hot Carrier
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