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Enhancement of Bonding Strength for Low Temperature Si3N4/Si3N4 Direct Wafer Bonding by Nitrogen-Plasma Activation and Hydrofluoric Pre-dip
ECS Transactions
◽
10.1149/06405.0111ecst
◽
2014
◽
Vol 64
(5)
◽
pp. 111-117
Author(s):
F. - S. Lo
◽
C. - C. Chiang
◽
C. Li
◽
T. - H. Lee
Keyword(s):
Low Temperature
◽
Wafer Bonding
◽
Bonding Strength
◽
Nitrogen Plasma
◽
Plasma Activation
◽
Direct Wafer Bonding
Download Full-text
Related Documents
Cited By
References
Enhancement of Bonding Strength for Low Temperature Si3N4/Si3N4 Direct Wafer Bonding by Nitrogen-Plasma Activation and Hydrofluoric Pre-dip
ECS Meeting Abstracts
◽
10.1149/ma2014-02/34/1753
◽
2014
◽
Keyword(s):
Low Temperature
◽
Wafer Bonding
◽
Bonding Strength
◽
Nitrogen Plasma
◽
Plasma Activation
◽
Direct Wafer Bonding
Download Full-text
Plasma activation assisted low-temperature direct wafer bonding
2012 Photonics Global Conference (PGC)
◽
10.1109/pgc.2012.6457954
◽
2012
◽
Author(s):
Hongyao Chua
◽
Xianshu Luo
◽
Wai Hong See Toh
◽
Junfeng Song
◽
Tsung-Yang Liow
◽
...
Keyword(s):
Low Temperature
◽
Wafer Bonding
◽
Plasma Activation
◽
Direct Wafer Bonding
Download Full-text
Plasma Activation as a Pretreatment Tool for Low-Temperature Direct Wafer Bonding Materials in Microsystems Technology
ECS Meeting Abstracts
◽
10.1149/ma2012-02/40/2988
◽
2012
◽
Keyword(s):
Low Temperature
◽
Wafer Bonding
◽
Plasma Activation
◽
Direct Wafer Bonding
◽
Microsystems Technology
Download Full-text
(Invited) Plasma Activation as a Pretreatment Tool for Low-Temperature Direct Wafer Bonding in Microsystems Technology
ECS Transactions
◽
10.1149/05007.0265ecst
◽
2013
◽
Vol 50
(7)
◽
pp. 265-276
◽
Cited By ~ 1
Author(s):
M. Eichler
◽
P. Hennecke
◽
K. Nagel
◽
M. Gabriel
◽
C.-P. Klages
Keyword(s):
Low Temperature
◽
Wafer Bonding
◽
Plasma Activation
◽
Direct Wafer Bonding
◽
Microsystems Technology
Download Full-text
Low temperature direct wafer bonding of GaAs to Si via plasma activation
Applied Physics Letters
◽
10.1063/1.4791584
◽
2013
◽
Vol 102
(5)
◽
pp. 054107
◽
Cited By ~ 9
Author(s):
C. Y. Yeo
◽
D. W. Xu
◽
S. F. Yoon
◽
E. A. Fitzgerald
Keyword(s):
Low Temperature
◽
Wafer Bonding
◽
Plasma Activation
◽
Direct Wafer Bonding
Download Full-text
High Precision Low Temperature Direct Wafer Bonding Technology for Wafer-Level 3D ICs Manufacturing
ECS Transactions
◽
10.1149/07509.0345ecst
◽
2016
◽
Vol 75
(9)
◽
pp. 345-353
◽
Cited By ~ 8
Author(s):
F. Kurz
◽
T. Plach
◽
J. Suss
◽
T. Wagenleitner
◽
D. Zinner
◽
...
Keyword(s):
Low Temperature
◽
High Precision
◽
Wafer Bonding
◽
Wafer Level
◽
3D Ics
◽
Direct Wafer Bonding
◽
Bonding Technology
Download Full-text
Low temperature GaAs/Si direct wafer bonding
Electronics Letters
◽
10.1049/el:20000507
◽
2000
◽
Vol 36
(7)
◽
pp. 677
◽
Cited By ~ 28
Author(s):
M. Alexe
◽
V. Dragoi
◽
M. Reiche
◽
U. Gösele
Keyword(s):
Low Temperature
◽
Wafer Bonding
◽
Direct Wafer Bonding
◽
Low Temperature Gaas
Download Full-text
Low-temperature direct wafer bonding and selective etching of yttrium iron garnet films on InP substrates
Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013)
◽
10.1109/cleo.1999.834500
◽
2003
◽
Author(s):
T. Izuhara
◽
M. Leby
◽
R.M. Osgood
◽
A. Kumar
◽
H. Bakhru
Keyword(s):
Low Temperature
◽
Wafer Bonding
◽
Yttrium Iron Garnet
◽
Selective Etching
◽
Yttrium Iron
◽
Garnet Films
◽
Direct Wafer Bonding
◽
Iron Garnet
◽
Inp Substrates
Download Full-text
Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
◽
10.1116/1.2943667
◽
2008
◽
Vol 26
(4)
◽
pp. 1560
◽
Cited By ~ 83
Author(s):
D. Liang
◽
J. E. Bowers
Keyword(s):
Low Temperature
◽
Wafer Bonding
◽
Silicon On Insulator
◽
Highly Efficient
◽
Direct Wafer Bonding
◽
Insulator Substrate
Download Full-text
Low temperature direct wafer bonding of silicon using a glass intermediate layer
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)
◽
10.1109/smicnd.1999.810582
◽
2003
◽
Cited By ~ 2
Author(s):
V. Dragoi
◽
M. Alexe
◽
M. Reiche
◽
U. Gosele
Keyword(s):
Low Temperature
◽
Wafer Bonding
◽
Intermediate Layer
◽
Direct Wafer Bonding
Download Full-text
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