(Invited) Fabrication of High-Quality Ge-on-Insulator Structures by Lateral Liquid Phase Epitaxy

2015 ◽  
Vol 69 (5) ◽  
pp. 305-311 ◽  
Author(s):  
T. Shimura ◽  
Y. Suzuki ◽  
M. Matsue ◽  
K. Kajimura ◽  
K. Tominaga ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Quality

Growth and characterization of high-quality GaInAsSb layers on GaSb substrates by liquid-phase epitaxy

1992 ◽  
Vol 35 (4) ◽  
pp. 523-528 ◽  
Author(s):  
Meng-Chyi Wu ◽  
Chi-Ching Chen ◽  
Ching-Ting Lee
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Quality

Epitaxial growth of gadolinium and lutetium-based aluminum perovskite thin films for X-ray micro-imaging applications

CrystEngComm ◽  
2016 ◽  
Vol 18 (4) ◽  
pp. 608-615 ◽  
Author(s):  
F. Riva ◽  
P.-A. Douissard ◽  
T. Martin ◽  
F. Carlà ◽  
Y. Zorenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Liquid Phase ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxy ◽  
High Quality ◽  
X Ray

High quality and dense GdLuAP:Eu scintillating screens have been successfully grown using liquid phase epitaxy showing superior imaging performances as compared the currently used GGG films.

High quality AlGaSb, AlGaAsSb and InGaAsSb epitaxial layers grown by liquid-phase epitaxy from Sb-rich melts

1997 ◽  
Vol 144 (6) ◽  
pp. 438-440 ◽  
Author(s):  
A.G. Deryagin ◽  
V.M. Smirnov ◽  
V.I. Vasil'ev ◽  
G.S. Sokolovskii ◽  
N.N. Faleev
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Epitaxial Layers ◽  
High Quality

Liquid Phase Epitaxy for High Quality YBa2Cu3O7-δ Films

2000 ◽  
pp. 891-893 ◽  
Author(s):  
Katsumi Nomura ◽  
Saburo Hoshi ◽  
Xin Yao ◽  
Kazuomi Kakimoto ◽  
Teruo Izumi ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Quality

High Quality n-Cd0.2 Hg0.8 Te Grown by Liquid Phase Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
K. Yasumura ◽  
H. Kimura ◽  
Y. Komine ◽  
K. Sato
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Influential Factors ◽  
Electrical Parameters ◽  
High Quality

ABSTRACTInfluential factors to the detectivity of n-CMT grown by liquid phase epitaxy on CdTe(111)B substrate are investigated. The factors are such as qualities of the substratesdopants and electrical parameters by which photoconductivity in CMT is governed.We show that the doping with small amounts of In is an appropriate mean not only to raise the mobility but also to make reproductivity better. The In- doped epitagia�r after annealed has the highest mobility among tested in 3×10 cm5 /Vsec, and the photoconductive lifetime in 0.54 μsec at 77K.The resultant detectivity of an infrared device is 3×1010 cmHz1/2 w−1.

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