Effect of phase coarsening under melt annealing on the electrical performance of polymer composites with a double percolation structure

Effect of phase coarsening on CB NP network formation and the electrical performance of double percolated PP/PS/CB composites under quiescent melt annealing.

The effect of chain mobility on the coarsening process of co-continuous, immiscible polymer blends under quiescent melt annealing

The relationship between the mobility of polymer molecular chains and the phase coarsening process of co-continuous, immiscible polymer blends under quiescent melt annealing is presented.

Polypropylene Carbon Nanotubes Nanocomposites: Combined Influence of Block Copolymer Compatibilizer and Melt Annealing on Electrical Properties

We study the influence of melt annealing and the presence of a block copolymer compatibilizer on the electrical properties of polypropylene carbon nanotubes (CNT) nanocomposites from the DC limit to microwave frequencies and link it to the morphological details. We show that the compatibilizer concentration controls three types of morphologies: separate CNT agglomerates, a network of well dispersed but interconnected CNT, and individualized but separate nanotubes. This explains why conductivity reaches an optimum over the whole frequency range at a low compatibilizer concentration. We model the corresponding structures by a semiquantitative schematic equivalent electrical circuit. A key outcome of the work is the understanding and control of dispersion mechanisms in order to optimize the electrical performances for efficient EMI shielding depending on the targeted frequency range.

Low Thermal Budget Ohmic Contact Formation by Laser Anneal

In this work, we demonstrate the possibility to achieve an ohmic contact using a low thermal budget applicable to backside processing after wafer thinning. The process window for laser annealing as a function of the thinning process is investigated. By laser melt annealing, we demonstrate the possibility for different silicide phases from pure nickel deposition on thinned 4H-SiC, formation of uniform carbon nanoclusters at the metal/SiC interface and recovery of thinning-induced defects. This has been demonstrated as a function of different thinning process and surface conditions.

Silicon Carbide Recrystallization Mechanism by Non-Equilibrium Melting Laser Anneal

We have demonstrated the possibility for epitaxial regrowth of crystalline SiC by laser melt annealing. The quality of the recrystallization is analyzed by XTEM, EELS, electron diffraction and XRD. The annealing guarantees a uniform activation achieved both in melting and solid phase. Carbon graphitization on the top surface and a crystallized silicon layer below is observed as an effect of the high temperature and the melting phase.

Reduced crystallinity and enhanced charge transport by melt annealing of an organic semiconductor on single layer graphene

We report on the effect of the annealing temperature on the crystallization and the electrical properties of the semiconducting polymer poly(3-hexylthiophene) (P3HT) on single layer graphene.