Growth and characterization of high-quality GaInAsSb layers on GaSb substrates by liquid-phase epitaxy

1992 ◽  
Vol 35 (4) ◽  
pp. 523-528 ◽  
Author(s):  
Meng-Chyi Wu ◽  
Chi-Ching Chen ◽  
Ching-Ting Lee
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Quality

Growth and Characterization of High-Quality InAs0.86Sb0.05P0.09Alloy by Liquid-Phase Epitaxy

1999 ◽  
Vol 38 (Part 1, No. 3A) ◽  
pp. 1314-1316 ◽  
Author(s):  
Lung-Chien Chen ◽  
Wen-Jeng Ho ◽  
Meng-Chyi Wu
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Quality

Growth and characterization of high‐quality In0.32Ga0.68P layers on GaAs0.61P0.39substrates by liquid‐phase epitaxy

1991 ◽  
Vol 70 (2) ◽  
pp. 983-987 ◽  
Author(s):  
Meng‐Chyi Wu ◽  
Chyuan‐Wei Chen ◽  
Shoei‐Chyuan Lu
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Quality

High-Quality GaInAsSb and GaAlAsSb Layers for Thermophotovoltaics Grown by Liquid-Phase Epitaxy

2010 ◽  
Vol 159 ◽  
pp. 87-90
Author(s):  
M. Milanova ◽  
Roumen Kakanakov ◽  
G. Koleva ◽  
P. Vitanov ◽  
V. Bakardjieva ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Al Content ◽  
Quaternary Compounds ◽  
Transmission Electron

GaSb based III-V heterostuctures are attractive for optoelectronic devices such as midin- frared lasers, detectors, and thermophotovoltaics (TPVs). In this paper the growth and characterization of GaInAsSb and GaAlAsSb quaternary layers, lat-tice-matched to GaSb substrate, are reported, with a particular focus on these alloys for TPV devi-ces. High-quality with a mirror-like surface morphology epilayers Ga1-x InxAsy Sb1-y with In content x in the range 0.1-0.22 and Ga1-xAlxAsySb1-y layers with Al content up to 0.3 in the solid are grown by Liquid-Phase Epitaxy (LPE) from In- and Ga-rich melt, respectively. The compositions of the quaternary compounds are determined by X-ray microanalysis. The crystalline quality of GaInAsSb/ GaSb and GaAlAsSb/GaSb heterostuctures is studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements.

Surface Characterization of GaN(0001) Grown by Liquid Phase Epitaxy Using Coaxial Impact-Collision Ion Scattering Spectroscopy

2008 ◽  
Vol 47 (9) ◽  
pp. 7281-7284 ◽  
Author(s):  
Hirofumi Suto ◽  
Shunjiro Fujii ◽  
Fumio Kawamura ◽  
Masashi Yoshimura ◽  
Yasuo Kitaoka ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Surface Characterization ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy

Growth and characterization of GaSb epilayers by liquid phase epitaxy

1990 ◽  
Vol 25 (2) ◽  
pp. 843-847 ◽  
Author(s):  
Y. K. Su ◽  
F. S. Juang
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy

Liquid Phase Epitaxial Growth and Characterization of High Quality GaInAsSb/InAs for Photodiodes

1993 ◽  
Vol 32 (S3) ◽  
pp. 125
Author(s):  
Gong Kan ◽  
Tomuo Yamaguchi ◽  
Isao Suzuki ◽  
Mitsuru Aoyama ◽  
Masashi Kumagawa ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
High Quality ◽  
Liquid Phase Epitaxial ◽  
Liquid Phase Epitaxial Growth
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