Erratum: “Low-Temperature Oxidation of Silicon Surface Using a Gas Mixture of H[sub 2] and O[sub 2] in a Catalytic Chemical Vapor Deposition System” [Electrochem. and Solid-State Lett., 2, 388 (1999)]

1999 ◽  
Vol 2 (12) ◽  
pp. 657
Author(s):  
A. Izumi
Keyword(s):  
Chemical Vapor Deposition ◽  
Solid State ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Silicon Surface ◽  
Chemical Vapor ◽  
Gas Mixture ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Catalytic Chemical Vapor Deposition

Low Temperature Nitridatio of SiO2 Films using a Catalytic-CVD System

2000 ◽  
Vol 611 ◽  
Author(s):  
Akira Izumi ◽  
Hidekazu Sato ◽  
Hideki Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Catalytic Decomposition ◽  
Catalytic Chemical Vapor Deposition ◽  
Sio2 Films ◽  
X Ray

ABSTRACTThis paper reports a procedure for low-temperature nitridation of silicon dioxide (SiO2) surfaces using species produced by catalytic decomposition of NH3 on heated tungsten in catalytic chemical vapor deposition (Cat-CVD) system. The surface of SiO2/Si(100) was nitrided at temperatures as low as 200°C. X-ray photoelectron spectroscopy measurements revealed that incorporated N atoms are bound to Si atoms and O atoms and located top-surface of SiO2.

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