Deposition Temperature Dependence of Optical Gap and Coloration Efficiency Spectrum in Electrochromic Tungsten Oxide Films

The flexible electrochromic supercapacitor electrode exhibits good electrochemical performances (13.6 mF cm−2, 138.2 F g−1) and high coloration efficiency (80.2 cm2 C−1).

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Oxidation State and Properties of Electrochromic Tungsten Oxide Films

MRS Proceedings ◽

10.1557/proc-210-75 ◽

1990 ◽

Vol 210 ◽

Author(s):

J. D. Klein ◽

A. Yen

Keyword(s):

Tungsten Oxide ◽

Oxide Films ◽

Emission Spectra ◽

Break Point ◽

Drastic Reduction ◽

Coloration Efficiency ◽

Multichannel Analyser ◽

Gradual Loss ◽

Oxygen Conditions ◽

Low Charge

AbstractTungsten oxide films were deposited by reactively sputtering a metallic W target in O2Ar atmospheres. Plasma emission spectra were observed as a function of the oxygen content of the chamber inlet gas using an optical multichannel analyser. The gradual loss of W lines as the O2 content was increased to 10% was accompanied by a drastic reduction in deposition rate. Cyclic voltammetry of the films deposited on ITO-coated substrates reveals that films produced under high oxygen conditions have low charge capacities and retain substantial Li upon initial cycling. The photopic coloration efficiency increased with increasing oxygen in the inlet gas. The electrochemical and electrochromic data exhibit breaks in behavior at the 10% O2 break point defined by optical spectroscopy.

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EFFECT OF DEPOSITION TEMPERATURE ON PLASMA GROWN ALUMINUM OXIDE FILMS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1988486 ◽

1988 ◽

Vol 49 (C4) ◽

pp. C4-409-C4-412 ◽

Cited By ~ 1

Author(s):

C. BOURREAU ◽

Y. CATHERINE

Keyword(s):

Aluminum Oxide ◽

Deposition Temperature ◽

Oxide Films

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Effect of deposition temperature on spray deposited cadmium oxide films

Materials Research Bulletin ◽

10.1016/s0025-5408(01)00487-1 ◽

2001 ◽

Vol 36 (3-4) ◽

pp. 439-447 ◽

Cited By ~ 21

Author(s):

B.J Lokhande ◽

M.D Uplane

Keyword(s):

Deposition Temperature ◽

Oxide Films ◽

Cadmium Oxide

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Deposition temperature dependence of the sputtered nanocrystalline silicon thin films on Teflon substrates deposited by RF magnetron sputtering method

2012 IEEE Symposium on Humanities, Science and Engineering Research ◽

10.1109/shuser.2012.6269003 ◽

2012 ◽

Author(s):

N. H. Mahzan ◽

S. B. Hashim ◽

S. H. Herman ◽

U. M. Noor ◽

M. Rusop

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Temperature Dependence ◽

Deposition Temperature ◽

Rf Magnetron Sputtering ◽

Nanocrystalline Silicon ◽

Silicon Thin Films

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Spatially Ordered Matrix of Nanostructured Tin–Tungsten Oxides Nanocomposites Formed by Ionic Layer Deposition for Gas Sensing

Sensors ◽

10.3390/s21124169 ◽

2021 ◽

Vol 21 (12) ◽

pp. 4169

Author(s):

Gennady Gorokh ◽

Natalia Bogomazova ◽

Abdelhafed Taleb ◽

Valery Zhylinski ◽

Timur Galkovsky ◽

...

Keyword(s):

Tungsten Oxide ◽

Gas Sensing ◽

Oxide Films ◽

High Sensitivity ◽

Anodic Alumina ◽

Film Deposition ◽

Silicon Substrates ◽

Layer By Layer ◽

Gas Sensitivity ◽

Nanoporous Anodic Alumina

The process of layer-by-layer ionic deposition of tin-tungsten oxide films on smooth silicon substrates and nanoporous anodic alumina matrices has been studied. To achieve the film deposition, solutions containing cationic SnF2 or SnCl2 and anionic Na2WO4 or (NH4)2O·WO3 precursors have been used. The effect of the solution compositions on the films deposition rates, morphology, composition, and properties was investigated. Possible mechanisms of tin-tungsten oxide films deposition into the pores and on the surface of anodic alumina are discussed. The electro-physical and gas-sensitive properties of nanostructured SnxWyOz films have been investigated. The prepared nanocomposites exhibit stable semiconductor properties characterized by high resistance and low temperature coefficient of electrical resistance of about 1.6 × 10−3 K−1. The sensitivity of the SnxWyOz films to 2 and 10 ppm concentrations of ammonia at 523 K was 0.35 and 1.17, respectively. At concentrations of 1 and 2 ppm of nitrogen dioxide, the sensitivity was 0.48 and 1.4, respectively, at a temperature of 473 K. At the temperature of 573 K, the sensitivity of 1.3 was obtained for 100 ppm of ethanol. The prepared nanostructured tin-tungsten oxide films showed promising gas-sensitivity, which makes them a good candidate for the manufacturing of gas sensors with high sensitivity and low power consumption.

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