Some etch properties of doped and undoped silicon oxide films formed by atmospheric pressure and plasma-activated chemical vapor deposition

1985 ◽  
Vol 3 (6) ◽  
pp. 1604 ◽  
Author(s):  
F. Gualandris
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Chemical Vapor

Plasma-assisted chemical vapor deposition and characterization of high quality silicon oxide films

1990 ◽  
Vol 193-194 ◽  
pp. 595-609 ◽  
Author(s):  
S.V Nguyen ◽  
D Dobuzinsky ◽  
D Dopp ◽  
R Gleason ◽  
M Gibson ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Chemical Vapor ◽  
High Quality

Decrease in Deposition Rate and Improvement of Step Coverage by CF4Addition to Plasma-Enhanced Chemical Vapor Deposition of Silicon Oxide Films

2000 ◽  
Vol 39 (Part 1, No. 1) ◽  
pp. 330-336 ◽  
Author(s):  
Sang Woo Lim ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano ◽  
Kunio Tada ◽  
Hiroshi Komiyama
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Step Coverage

Infrared, Raman, and X‐Ray Diffraction Studies of Silicon Oxide Films Formed from SiH4 and  N 2 O  Chemical Vapor Deposition

1985 ◽  
Vol 132 (2) ◽  
pp. 482-488 ◽  
Author(s):  
Minoru Nakamura ◽  
Yasuhiro Mochizuki ◽  
Katsuhisa Usami ◽  
Yoshiko Itoh ◽  
Tadashi Nozaki
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray
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