Atmospheric pressure chemical vapor deposition of blanket tungsten films on silicon substrates for integrated circuit applications

1995 ◽  
Vol 24 (6) ◽  
pp. 761-766 ◽  
Author(s):  
M. S. Haque ◽  
U. V. Patel ◽  
H. A. Naseem ◽  
W. D. Brown
Keyword(s):  
Chemical Vapor Deposition ◽  
Integrated Circuit ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Pressure Chemical

Growth of Single-Crystal Pyrite Films by Atmospheric Pressure Chemical Vapor Deposition

2003 ◽  
Vol 15 (9) ◽  
pp. 1763-1765 ◽  
Author(s):  
Naoyuki Takahashi ◽  
Yusuke Nakatani ◽  
Takuma Yatomi ◽  
Takato Nakamura
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Pressure Chemical

scholarly journals Epitaxial Growth of Magnesia Films on Single Crystalline Magnesia Substrates by Atmospheric-Pressure Chemical Vapor Deposition

2016 ◽  
Vol 5 (2) ◽  
pp. 56
Author(s):  
Keiji Komatsu ◽  
Pineda Marulanda David Alonso ◽  
Nozomi Kobayashi ◽  
Ikumi Toda ◽  
Shigeo Ohshio ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Reciprocal Lattice ◽  
Chemical Vapor ◽  
X Ray ◽  
Pole Figures ◽  
Out Of Plane ◽  
Pressure Chemical

<p class="1Body">MgO films were epitaxially grown on single crystal MgO substrates by atmospheric-pressure chemical vapor deposition (CVD). Reciprocal lattice mappings and X-ray reflection pole figures were used to evaluate the crystal quality of the synthesized films and their epitaxial relation to their respective substrates. The X-ray diffraction profiles indicated that the substrates were oriented out-of-plane during MgO crystal growth. Subsequent pole figure measurements showed how all the MgO films retained the substrate in-plane orientations by expressing the same pole arrangements. The reciprocal lattice mappings indicated that the whisker film showed a relatively strong streak while the continuous film showed a weak one. Hence, highly crystalline epitaxial MgO thin films were synthesized on single crystal MgO substrates by atmospheric-pressure CVD.</p>

Chemical vapor deposition growth of few-layer graphene for transparent conductive films

RSC Advances ◽  
2015 ◽  
Vol 5 (55) ◽  
pp. 44142-44148 ◽  
Author(s):  
Jun Pu ◽  
Lei Tang ◽  
Chaowei Li ◽  
Taotao Li ◽  
Lin Ling ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Conductive Films ◽  
Layer Graphene ◽  
Pressure Chemical ◽  
Few Layer Graphene ◽  
Etching Effect

The facile and scalable technique is demonstrated, which grow graphene with controllable layers on copper foil substrates using the etching effect of H2 in atmospheric pressure chemical vapor deposition (APCVD).

Low-temperature atmospheric pressure chemical vapor deposition of titanium disulfide films

1992 ◽  
Vol 4 (6) ◽  
pp. 1144-1146 ◽  
Author(s):  
Charles H. Winter ◽  
T. Suren Lewkebandara ◽  
James W. Proscia
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Titanium Disulfide ◽  
Pressure Chemical

Atmospheric-Pressure Chemical Vapor Deposition of Group IVb Metal Phosphide Thin Films from Tetrakisdimethylamidometal Complexes and Cyclohexylphosphine

2004 ◽  
Vol 16 (6) ◽  
pp. 1120-1125 ◽  
Author(s):  
Christopher S. Blackman ◽  
Claire J. Carmalt ◽  
Shane A. O'Neill ◽  
Ivan P. Parkin ◽  
Leonardo Apostolico ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Metal Phosphide ◽  
Pressure Chemical
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