Influence of Deposition Parameters on the Texture of Chemical Vapor Deposited Tungsten Films by a  WF 6 /  H 2 / Ar Gas Source

1998 ◽  
Vol 145 (9) ◽  
pp. 3235-3240 ◽  
Author(s):  
I‐Shun Chang ◽  
Min‐Hsiung Hon
Keyword(s):  
Chemical Vapor ◽  
Gas Source ◽  
Deposition Parameters ◽  
Chemical Vapor Deposited ◽  
Ar Gas

Texture Analysis of CVD Free-Standing Diamond Films

2005 ◽  
Vol 105 ◽  
pp. 421-426
Author(s):  
Leng Chen ◽  
H.P. Feng ◽  
Fan Xiu Lu
Keyword(s):  
Diamond Films ◽  
Chemical Vapor ◽  
Orientation Distribution ◽  
Crystallographic Direction ◽  
Free Standing ◽  
Fibre Texture ◽  
Deposition Parameters ◽  
Pole Figures ◽  
Ar Gas ◽  
Substrate Temperatures

The crystallographic textures of the free-standing diamond films which were synthesized by the chemical vapor deposition (CVD) using a CH4/H2/Ar gas mixtures have been investigated. Texture components of the diamond films are analyzed with pole figures and orientation distribution function (ODF). The surface morphology of the diamond films grown at different substrate temperatures as well as different gas concentrations is observed with scanning electron microscopy (SEM). The experimental results indicate that the intensity of {110} fibre texture becomes much higher with the increase of the substrate temperature. It is considered that the higher multiplicity of <110> crystallographic direction in diamond octahedron leads to the higher appearance possibility of {110} fibre texture and the final texture components of the diamond films depend upon the CVD deposition parameters.

Dependence of PECVD Silicon Oxynitride Properties on Deposition Parameters

1988 ◽  
Vol 131 ◽  
Author(s):  
Aubrey L. Helms ◽  
Robert M. Havrilla
Keyword(s):  
Gas Flow ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Gas Flow Rate ◽  
Process Gas ◽  
Deposition Parameters ◽  
Chemical Vapor Deposited ◽  
Passivation Layers ◽  
Parallel Plate Reactor ◽  
Deposition Conditions

ABSTRACTThe properties of Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon oxynitride thin films were determined for a variety of deposition conditions. The films were characterized with respect to stress, refractive index, deposition rate, hydrogen content, dielectric constant, and uniformity. The films were deposited in an Electrotech ND6200 parallel plate reactor using a silane - ammonia - nitrous oxide process gas chemistry. Deposition parameters which were investigated include process gas flow rate, power, and total pressure. The possible application of these films as both inter-layer and final passivation layers for use on GaAs ICs will be discussed.

Influence of the deposition parameters on the nanolamella periodicity of chemical vapor deposited Ti1-xAlxN

2021 ◽  
pp. 130819
Author(s):  
Christian Saringer ◽  
Michael Tkadletz ◽  
Josef Thurner ◽  
Christoph Czettl ◽  
Nina Schalk
Keyword(s):  
Chemical Vapor ◽  
Deposition Parameters ◽  
Chemical Vapor Deposited

Texture Analysis of Poly(vinyl Chloride) Foils

2005 ◽  
Vol 105 ◽  
pp. 439-446 ◽  
Author(s):  
Ladislav Kalvoda ◽  
Maja Dlouhá ◽  
Stanislav Vratislav ◽  
R. Lukáš ◽  
Marianne Gilbert
Keyword(s):  
Diamond Films ◽  
Chemical Vapor ◽  
Orientation Distribution ◽  
Free Standing ◽  
Fibre Texture ◽  
Poly Vinyl Chloride ◽  
Deposition Parameters ◽  
Pole Figures ◽  
Ar Gas ◽  
Substrate Temperatures

The crystallographic textures of the free-standing diamond films which were synthesized by the chemical vapor deposition (CVD) using a CH4/H2/Ar gas mixtures have been investigated. Texture components of the diamond films are analyzed with pole figures and orientation distribution function (ODF). The surface morphology of the diamond films grown at different substrate temperatures as well as different gas concentrations is observed with scanning electron microscopy.(SEM). The experimental results indicate that the intensity of {110} fibre texture becomes much higher with the increase of the substrate temperature. It is considered that the higher multiplicity of <110> crystallographic direction in diamond octahedron leads to the higher appearance possibility of {110} fibre texture and the final texture components of the diamond films depend upon the CVD deposition parameters.

The Dependence of the Stress of Chemical Vapor Deposited Tungsten Films on Deposition Parameters

1994 ◽  
Vol 141 (3) ◽  
pp. 843-848 ◽  
Author(s):  
John Schmitz ◽  
Sien Kang ◽  
Rob Wolters ◽  
Karel van den Aker
Keyword(s):  
Chemical Vapor ◽  
Deposition Parameters ◽  
Chemical Vapor Deposited

Control and Variation of Stress in Pecvd SiNx Films on InP

1988 ◽  
Vol 130 ◽  
Author(s):  
J. Lopata ◽  
W. C. Dautremont-Smith ◽  
J. W. Lee
Keyword(s):  
Compressive Stress ◽  
High Frequency ◽  
Gas Flow ◽  
Plasma Reactor ◽  
Low Frequency ◽  
Chemical Vapor ◽  
Flow Ratio ◽  
Deposition Parameters ◽  
Chemical Vapor Deposited ◽  
Gas Flow Ratio

AbstractStress in plasma enhanced chemical vapor deposited (PECVD) SiNx films on InP has been evaluated as a function of source gases (NH3 /SiH4 or N2/SiH4) and plasma operating frequency (high, » 1 MHz or low, « 1 MHz). All films were deposited at 300°C in the same parallel-plate, radial flow plasma reactor. Levels of stress in PECVD SiNx on InP within a continuous range from moderately high tensile (∼ 5 × 109 dyne cm−2) to very high compressive (2 × 1010 dyne cm−2 ) were obtained from appropriate choices of deposition parameters. Deposition from NH3/SiH4 at high frequency produces tensile stress, of magnitude increasing with NH3/SiH4 flow ratio. Deposition from N2/SiH4 at high frequency produces zero to low compressive stress. At low frequency compressive stress is always produced; for N2/SiH4 increasing the gas flow ratio from 25:1 to 500:1 reduces the compressive stress from 1.8 X 1010 to 7 × 108 dyne cm−2. The ability to vary the stress in a dielectric film of approximately constant chemical composition over such a broad range is beneficial for assessing the effects of stress on device performance.

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