Chemical Etch Rate of Plasma‐Enhanced Chemical Vapor Deposited SiO2 Films: Effect of Deposition Parameters

1997 ◽  
Vol 144 (8) ◽  
pp. 2859-2864 ◽  
Author(s):  
R. S. Besser ◽  
P. J. Louris ◽  
R. G. Musket
Keyword(s):  
Etch Rate ◽  
Chemical Vapor ◽  
Sio2 Films ◽  
Deposition Parameters ◽  
Chemical Etch ◽  
Chemical Vapor Deposited

Dependence of PECVD Silicon Oxynitride Properties on Deposition Parameters

1988 ◽  
Vol 131 ◽  
Author(s):  
Aubrey L. Helms ◽  
Robert M. Havrilla
Keyword(s):  
Gas Flow ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Gas Flow Rate ◽  
Process Gas ◽  
Deposition Parameters ◽  
Chemical Vapor Deposited ◽  
Passivation Layers ◽  
Parallel Plate Reactor ◽  
Deposition Conditions

ABSTRACTThe properties of Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon oxynitride thin films were determined for a variety of deposition conditions. The films were characterized with respect to stress, refractive index, deposition rate, hydrogen content, dielectric constant, and uniformity. The films were deposited in an Electrotech ND6200 parallel plate reactor using a silane - ammonia - nitrous oxide process gas chemistry. Deposition parameters which were investigated include process gas flow rate, power, and total pressure. The possible application of these films as both inter-layer and final passivation layers for use on GaAs ICs will be discussed.

Mechanism of Plasma-Less Gaseous Etching Process for Damaged Oxides from the Ion Implantation Process

2009 ◽  
Vol 145-146 ◽  
pp. 227-230 ◽  
Author(s):  
Suguru Saito ◽  
Yoshiya Hagimoto ◽  
Hayato Iwamoto ◽  
Yusuke Muraki
Keyword(s):  
Ion Implantation ◽  
Semiconductor Manufacturing ◽  
Etch Rate ◽  
Chemical Vapor ◽  
Wet Etching ◽  
Etching Process ◽  
Shallow Trench Isolation ◽  
Chemical Vapor Deposited ◽  
Trench Isolation ◽  
Implantation Process

Recently, plasma-less gaseous etching processes have attracted attention for their interesting etching properties. Previously, we reported on the etching properties of theses processes for various kinds of oxides and revealed that they reduce the etch rate of the chemical-vapor-deposited (CVD) oxides more than the conventional wet etching process does [1]. Our results also revealed that depressions called divots in the CVD oxide of the shallow trench isolation (STI) became smaller in size by substituting a plasma-less gaseous etching process for the conventional wet etching process. In semiconductor manufacturing, many processes are used to remove oxides damaged during ion implantation or reactive ion etching on the device surface. Therefore, it is very important to understand the etching properties of plasma-less gaseous etching processes for damaged oxides as well as those for other kinds of oxides. In this report, we evaluate the etching properties of one particular plasma-less gaseous etching process for oxide films damaged during the ion implantation process under various conditions and discuss the mechanism of interesting etching properties for the damaged oxides.

Influence of the deposition parameters on the nanolamella periodicity of chemical vapor deposited Ti1-xAlxN

2021 ◽  
pp. 130819
Author(s):  
Christian Saringer ◽  
Michael Tkadletz ◽  
Josef Thurner ◽  
Christoph Czettl ◽  
Nina Schalk
Keyword(s):  
Chemical Vapor ◽  
Deposition Parameters ◽  
Chemical Vapor Deposited

scholarly journals Characterization of Chemical Vapor Deposited Tetraethyl Orthosilicate based SiO2 Films for Photonic Devices

2016 ◽  
Vol 22 (1) ◽  
Author(s):  
Jhansirani KOTCHARLAKOTA ◽  
Venkata Hari Krishna SRIRAMA ◽  
Raghvendra Sarvjeet DUBEY
Keyword(s):  
Chemical Vapor ◽  
Photonic Devices ◽  
Tetraethyl Orthosilicate ◽  
Sio2 Films ◽  
Chemical Vapor Deposited

The Dependence of the Stress of Chemical Vapor Deposited Tungsten Films on Deposition Parameters

1994 ◽  
Vol 141 (3) ◽  
pp. 843-848 ◽  
Author(s):  
John Schmitz ◽  
Sien Kang ◽  
Rob Wolters ◽  
Karel van den Aker
Keyword(s):  
Chemical Vapor ◽  
Deposition Parameters ◽  
Chemical Vapor Deposited
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