Influence of the deposition parameters on the nanolamella periodicity of chemical vapor deposited Ti1-xAlxN

2021 ◽  
pp. 130819
Author(s):  
Christian Saringer ◽  
Michael Tkadletz ◽  
Josef Thurner ◽  
Christoph Czettl ◽  
Nina Schalk
Keyword(s):  
Chemical Vapor ◽  
Deposition Parameters ◽  
Chemical Vapor Deposited

Dependence of PECVD Silicon Oxynitride Properties on Deposition Parameters

1988 ◽  
Vol 131 ◽  
Author(s):  
Aubrey L. Helms ◽  
Robert M. Havrilla
Keyword(s):  
Gas Flow ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Gas Flow Rate ◽  
Process Gas ◽  
Deposition Parameters ◽  
Chemical Vapor Deposited ◽  
Passivation Layers ◽  
Parallel Plate Reactor ◽  
Deposition Conditions

ABSTRACTThe properties of Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon oxynitride thin films were determined for a variety of deposition conditions. The films were characterized with respect to stress, refractive index, deposition rate, hydrogen content, dielectric constant, and uniformity. The films were deposited in an Electrotech ND6200 parallel plate reactor using a silane - ammonia - nitrous oxide process gas chemistry. Deposition parameters which were investigated include process gas flow rate, power, and total pressure. The possible application of these films as both inter-layer and final passivation layers for use on GaAs ICs will be discussed.

The Dependence of the Stress of Chemical Vapor Deposited Tungsten Films on Deposition Parameters

1994 ◽  
Vol 141 (3) ◽  
pp. 843-848 ◽  
Author(s):  
John Schmitz ◽  
Sien Kang ◽  
Rob Wolters ◽  
Karel van den Aker
Keyword(s):  
Chemical Vapor ◽  
Deposition Parameters ◽  
Chemical Vapor Deposited

Control and Variation of Stress in Pecvd SiNx Films on InP

1988 ◽  
Vol 130 ◽  
Author(s):  
J. Lopata ◽  
W. C. Dautremont-Smith ◽  
J. W. Lee
Keyword(s):  
Compressive Stress ◽  
High Frequency ◽  
Gas Flow ◽  
Plasma Reactor ◽  
Low Frequency ◽  
Chemical Vapor ◽  
Flow Ratio ◽  
Deposition Parameters ◽  
Chemical Vapor Deposited ◽  
Gas Flow Ratio

AbstractStress in plasma enhanced chemical vapor deposited (PECVD) SiNx films on InP has been evaluated as a function of source gases (NH3 /SiH4 or N2/SiH4) and plasma operating frequency (high, » 1 MHz or low, « 1 MHz). All films were deposited at 300°C in the same parallel-plate, radial flow plasma reactor. Levels of stress in PECVD SiNx on InP within a continuous range from moderately high tensile (∼ 5 × 109 dyne cm−2) to very high compressive (2 × 1010 dyne cm−2 ) were obtained from appropriate choices of deposition parameters. Deposition from NH3/SiH4 at high frequency produces tensile stress, of magnitude increasing with NH3/SiH4 flow ratio. Deposition from N2/SiH4 at high frequency produces zero to low compressive stress. At low frequency compressive stress is always produced; for N2/SiH4 increasing the gas flow ratio from 25:1 to 500:1 reduces the compressive stress from 1.8 X 1010 to 7 × 108 dyne cm−2. The ability to vary the stress in a dielectric film of approximately constant chemical composition over such a broad range is beneficial for assessing the effects of stress on device performance.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

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