Oxygen Segregation in CZ Silicon Crystal Growth on Applying a High Axial Magnetic Field

1986 ◽  
Vol 133 (8) ◽  
pp. 1682-1686 ◽  
Author(s):  
K. M. Kim ◽  
P. Smetana
Keyword(s):  
Magnetic Field ◽  
Crystal Growth ◽  
Axial Magnetic Field ◽  
Silicon Crystal

Numerical Simulation of 300mm CZ Silicon Crystal Growth with Axial Magnetic Fields

2011 ◽  
Vol 689 ◽  
pp. 179-183
Author(s):  
Wen Ting Xu ◽  
Hai Ling Tu ◽  
Qing Chang ◽  
Qing Hua Xiao ◽  
Xiao Lin Dai ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Numerical Simulation ◽  
Growth Rate ◽  
Crystal Growth ◽  
Magnetic Fields ◽  
Growth Rates ◽  
Axial Magnetic Field ◽  
Silicon Crystal ◽  
Crystal Interfaces ◽  
Hot Zone

We studied the optimization of 300mm CZ silicon crystal growth in 28 inch hot zone with axial magnetic field. The convex of melt-crystal interfaces toward to the crystal are observed in our simulations under different growth velocities (0.3mm/min, 0.5mm/min and 0.65mm/min). The convections in melt were illustrated under different growth rates and intensities of magnetic field. The growth rate of 0.5mm/min and axial magnetic fields intensity of 0.3T were recommended as an appropriate control condition.

Applicability of LES turbulence modeling for CZ silicon crystal growth systems with traveling magnetic field

2010 ◽  
Vol 312 (21) ◽  
pp. 3225-3234 ◽  
Author(s):  
A. Krauze ◽  
N. Jēkabsons ◽  
A. Muižnieks ◽  
A. Sabanskis ◽  
U. Lācis
Keyword(s):  
Magnetic Field ◽  
Crystal Growth ◽  
Turbulence Modeling ◽  
Silicon Crystal ◽  
Traveling Magnetic Field

The Effect of an External Magnetic Field on the Impurity Distribution in an RF-FZ Silicon Crystal During the Growth Process

2000 ◽  
Author(s):  
Tetsuo Munakata ◽  
Satoshi Someya ◽  
Ichiro Tanasawa
Keyword(s):  
Magnetic Field ◽  
Crystal Growth ◽  
External Magnetic Field ◽  
Applied Magnetic Field ◽  
Impurity Concentration ◽  
Growth Process ◽  
Silicon Crystal ◽  
Impurity Distribution ◽  
Rf Heating ◽  
Impurity Segregation

Abstract The impurity concentration distribution in a silicon crystal during the floating zone (FZ) growth process under radio-frequency (RF) heating and the effect of an externally applied magnetic field on the impurity distribution in the crystal have been investigated numerically. The main purpose of the study is to clarify the characteristics of the impurity distribution in the silicon crystal under the RF-FZ crystal growth process, and the effect of an externally applied magnetic field on such an impurity distribution. The numerically obtained characteristics on impurity distribution in the crystal are as follows. In the case of excluding the external magnetic field, impurity concentration in the crystal varies due to the fluctuation of the melt flow. If we apply an external magnetic field, such impurity variation in the crystal disappears due to the stabilizing effect of the external magnetic field. Further, the crystal growth rate is decreased, the impurity concentration in the crystal is also decreased. The impurity segregation coefficient does not affect the impurity distribution in the crystal.

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