Numerical Simulation of 300mm CZ Silicon Crystal Growth with Axial Magnetic Fields

2011 ◽  
Vol 689 ◽  
pp. 179-183
Author(s):  
Wen Ting Xu ◽  
Hai Ling Tu ◽  
Qing Chang ◽  
Qing Hua Xiao ◽  
Xiao Lin Dai ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Numerical Simulation ◽  
Growth Rate ◽  
Crystal Growth ◽  
Magnetic Fields ◽  
Growth Rates ◽  
Axial Magnetic Field ◽  
Silicon Crystal ◽  
Crystal Interfaces ◽  
Hot Zone

We studied the optimization of 300mm CZ silicon crystal growth in 28 inch hot zone with axial magnetic field. The convex of melt-crystal interfaces toward to the crystal are observed in our simulations under different growth velocities (0.3mm/min, 0.5mm/min and 0.65mm/min). The convections in melt were illustrated under different growth rates and intensities of magnetic field. The growth rate of 0.5mm/min and axial magnetic fields intensity of 0.3T were recommended as an appropriate control condition.

Zur Rayleigh-Taylor-Instabilität eines rotierenden Wasserstofflichtbogens im axialen Magnetfeld

1970 ◽  
Vol 25 (2) ◽  
pp. 273-282 ◽  
Author(s):  
H. F. Döbele
Keyword(s):  
Magnetic Field ◽  
Growth Rate ◽  
Heat Conduction ◽  
Dispersion Relation ◽  
Electrical Conduction ◽  
Growth Rates ◽  
Plasma Column ◽  
Qualitative Agreement ◽  
Axial Magnetic Field ◽  
Rayleigh Taylor Instability

Abstract The Rayleigh-Taylor instability of a rotating hydrogen arc in an axial magnetic field is investigated with allowance for electrical conduction, heat conduction and viscosity. The r-depending part of the perturbation was assumed to be in the form of a half-period of a standing wave. The corresponding dispersion relation is derived in the WKB-approximation and is solved numerically. In contrast with the case without dissipation, the frequencies and growth rates of the different modes depend on the parameters of the unperturbed plasma column. The calculation shows, in qualitative agreement with the experiment, that with increasing magnetic field the highest growth rate passes successively to the next higher mode.

Effect of axial magnetic field tapering on whistler-pumped FEL amplifier in collective Raman regime operation

2018 ◽  
Vol 7 (4) ◽  
pp. 2044
Author(s):  
Ram Gopal ◽  
Pradip Kumar Jain ◽  
Pradip Kumar Jain
Keyword(s):  
Magnetic Field ◽  
Growth Rate ◽  
Magnetic Fields ◽  
Plasma Density ◽  
Cyclotron Frequency ◽  
Axial Magnetic Field ◽  
Electron Cyclotron ◽  
Interaction Region ◽  
Background Plasma ◽  
Transfer Energy

The dispersion relation of the FEL Amplifiers is sensitive to the linear tapered strong axial magnetic fields, electron cyclotron frequency and plasma frequency of electrons. For the synchronism of the pumped frequency, it should be closed to electron cyclotron frequency which is resonantly enhanced the wiggler wave number that produces the amplifier radiation for higher frequency from sub millimeter wave to optical ranges. The guiding of radiation signal into the waveguide and charge neutralization phenomenon, the beam density should be greater than the background plasma density with tapered strong axial magnetic field. It is quite considerable that radiation signal slowed down at much higher background plasma density comparable to the density of beams and enhanced the instability growth rate also. In Raman Regime operation, the growth rate decreases as increases with operation frequency of the amplifier, however, the growth rate is larger in this regime. It is noted that as increases with background plasma density, the beat wave frequency of the Ponderomotive waves is increases thus the mechanism of background plasma density can serve for tenability of the higher frequencies. The tapering of the strong guided magnetic field is a crucial role for enhancing the efficiency of the net transfer energy as well as reduction of interaction region along the axis. It is observed that, an efficiency of the transfer energy enhanced by while the reduction along the interaction region of about with the variation of tapering in a strong axial guided magnetic fields.  

Numerical Simulation of Point Defect Distributions in a Growing Czochralski Silicon Crystal in Response to an Abrupt Change in the Growth Conditions

1995 ◽  
Vol 378 ◽  
Author(s):  
W. Wijaranakula ◽  
Q. S. Zhang ◽  
K. Takano ◽  
H. Yamagishi
Keyword(s):  
Numerical Simulation ◽  
Growth Rate ◽  
Crystal Growth ◽  
Point Defect ◽  
Flow Pattern ◽  
Abrupt Change ◽  
Silicon Crystal ◽  
Crystal Growth Rate ◽  
Rate Theory ◽  
Czochralski Silicon

AbstractNumerical simulation of point defect distributions in a growing Czochralski silicon crystal with an abrupt change in the crystal growth rate from 1.0 to 0.4 mm/min was performed. The result was fitted to the experimental data for the flow pattern defects obtained from a crystal grown under simulated conditions. From the simulation result, it was observed that the axial temperature distribution shifts slightly upwards as a result of the growth rate reduction. Based upon the argument that the flow pattern defects are of vacancy-type, it is proposed that the generation rate of the flow pattern defects during crystal growth can be described by the classical nucleation rate theory proposed by Becker [Proc.Phys.Soc., 52, 71(1940)]. In addition, it is suggested that the vacancy concentration in the flow pattern defects depends upon the reaction time between the silicon interstitials and the flow pattern defects and thus the crystal growth rate.

Comparison of copper sulphate pentahydrate growth rates determined by different methods

1990 ◽  
Vol 55 (7) ◽  
pp. 1691-1707 ◽  
Author(s):  
Miloslav Karel ◽  
Jiří Hostomský ◽  
Jaroslav Nývlt ◽  
Axel König
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Fluidized Bed ◽  
Growth Rates ◽  
Copper Sulphate ◽  
Crystal Growth Rate ◽  
Effect Of Temperature ◽  
Rotating Disc ◽  
Shape Factors ◽  
Data Treatment

Crystal growth rates of copper sulphate pentahydrate (CuSO4.5 H2O) determined by different authors and methods are compared. The methods included in this comparison are: (i) Measurement on a fixed crystal suspended in a streaming solution, (ii) measurement on a rotating disc, (iii) measurement in a fluidized bed, (iv) measurement in an agitated suspension. The comparison involves critical estimation of the supersaturation used in measurements, of shape factors used for data treatment and a correction for the effect of temperature. Conclusions are drawn for the choice of values to be specified when data of crystal growth rate measurements are published.

Numerical Study of the Effect of Magnetic Fields on Melt-Crystal Interface-Deflection in Czochralski Crystal Growth

2003 ◽  
Author(s):  
Lijun Liu ◽  
Koichi Kakimoto
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Numerical Study ◽  
Silicon Crystal ◽  
Czochralski Growth ◽  
Thermal Flow ◽  
Interface Shape ◽  
Convective Thermal ◽  
And Control ◽  
Crystal Interface

In order to control the impurity distribution and remove defects in a crystal grown in Czochralski growth for high quality crystals of silicon, it is necessary to study and control the melt-crystal interface shape, which plays an important role in control of the crystal quality. The melt-crystal interface interacts with and is determined by the convective thermal flow of the melt in the crucible. Application of magnetic field in the Czochralski system is an effective tool to control the convective thermal flow in the crucible. Therefore, the shape of the melt-crystal interface can be modified accordingly. Numerical study is performed in this paper to understand the effect of magnetic field on the interface deflection in Czochralski system. Comparisons have been carried out by computations for four arrangements of the magnetic field: without magnetic field, a vertical magnetic field and two types of cusp-shaped magnetic field. The velocity, pressure, thermal and electromagnetic fields are solved with adaptation of the mesh to the iteratively modified interface shape. The multi-block technique is applied to discretize the melt field in the crucible and the solid field of silicon crystal. The unknown shape of the melt-crystal interface is achieved by an iterative procedure. The computation results show that the magnetic fields have obvious effects on both the pattern and strength of the convective flow and the interface shape. Applying magnetic field in the Czochralski system, therefore, is an effective tool to control the quality of bulk crystal in Czochralski growth process.

Turbulence changes from magnetic fields in a stationary plasma

2010 ◽  
Vol 77 (4) ◽  
pp. 537-545 ◽  
Author(s):  
A. B. ALEXANDER ◽  
C. T. RAYNOR ◽  
D. L. WIGGINS ◽  
M. K. ROBINSON ◽  
C. C. AKPOVO ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Field Strength ◽  
Magnetic Field Strength ◽  
Axial Magnetic Field ◽  
Turbulent Energy ◽  
Dominant Mode ◽  
Dc Glow Discharge ◽  
Turbulent Fluctuations ◽  
Stationary Plasma

AbstractWhen the krypton plasma in a DC glow discharge tube is exposed to an axial magnetic field, the turbulent energy and the characteristic dominant mode in the turbulent fluctuations are systematically and unexpectedly reduced with increasing magnetic field strength. When the index measuring the rate of transfer of energy through fluctuation scales is monitored, a lambda-like dependence on turbulent energy is routinely observed in all magnetic fields. From this, a critical turbulent energy is identified, which also decreases with increasing magnetic field strength.

Sign in / Sign up

Export Citation Format

Share Document