Pentacene Thin-Film Transistors and Inverters with Dual-Gate Structure

2006 ◽  
Vol 9 (11) ◽  
pp. G320 ◽  
Author(s):  
Jae Bon Koo ◽  
Jung Wook Lim ◽  
Seong Hyun Kim ◽  
Chan Hoe Ku ◽  
Sang Chul Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Structure ◽  
Dual Gate

Pentacene Organic Thin-Film Transistors with Dual-Gate Structure

2007 ◽  
Vol 124-126 ◽  
pp. 383-386
Author(s):  
Jae Bon Koo ◽  
Jung Wook Lim ◽  
Chan Hoe Ku ◽  
Sang Chul Lim ◽  
Jung Hun Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrostatic Potential ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Gate Structure ◽  
Dual Gate ◽  
Bottom Gate

We report on the fabrication of dual-gate pentacene organic thin-film transistors (OTFTs) using a plasma-enhanced atomic layer deposited (PEALD) 150 nm thick Al2O3 as a bottom gate dielectric and a 300 nm thick parylene or a PEALD 200 nm thick Al2O3 as both a top gate dielectric and a passivation layer. The threshold voltage (Vth) of OTFT with a 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with a PEALD 200 nm thick Al2O3 as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of Vth of OTFT with the dual-gate structure has been successfully understood by an analysis of electrostatic potential.

Characterization of Top-Gate Effects in Amorphous InGaZnO$_{4}$ Thin-Film Transistors Using a Dual-Gate Structure

2012 ◽  
Vol 51 ◽  
pp. 104201 ◽  
Author(s):  
Kazushige Takechi ◽  
Shinnosuke Iwamatsu ◽  
Toru Yahagi ◽  
Yoshiyuki Watanabe ◽  
Seiya Kobayashi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Structure ◽  
Dual Gate ◽  
Amorphous Ingazno

Pentacene Organic Thin-Film Transistors with Dual-Gate Structure

2007 ◽  
pp. 383-386
Author(s):  
Jae Bon Koo ◽  
Jung Wook Lim ◽  
Chan Hoe Ku ◽  
Sang Chul Lim ◽  
Jung Hun Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Gate Structure ◽  
Dual Gate

Reduction of Photo-Leakage Current in ZnO Thin-Film Transistors With Dual-Gate Structure

2011 ◽  
Vol 32 (4) ◽  
pp. 509-511 ◽  
Author(s):  
Yudai Kamada ◽  
Shizuo Fujita ◽  
Mutsumi Kimura ◽  
Takahiro Hiramatsu ◽  
Tokiyoshi Matsuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Gate Structure ◽  
Dual Gate

Kink current suppression improvement of metal-induced laterally crystallized silicon thin-film transistors employing asymmetric-channel dual-gate structure

2009 ◽  
Vol 94 (10) ◽  
pp. 102110 ◽  
Author(s):  
Il-Suk Kang ◽  
Young-Su Kim ◽  
Hyun-Sang Seo ◽  
Chi Won Ahn ◽  
Jun-Mo Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Asymmetric Channel ◽  
Silicon Thin Film ◽  
Gate Structure ◽  
Dual Gate

scholarly journals Characterizing the electrical properties of raised S/D junctionless thin-film transistors with a dual-gate structure

2014 ◽  
Vol 9 (1) ◽  
pp. 669
Author(s):  
Ya-Chi Cheng ◽  
Hung-Bin Chen ◽  
Jun-Ji Su ◽  
Chi-Shen Shao ◽  
Cheng-Ping Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Thin Film Transistors ◽  
Gate Structure ◽  
Dual Gate

Indium–gallium–zinc–oxide thin-film transistor with a planar split dual-gate structure

2017 ◽  
Vol 31 (35) ◽  
pp. 1750332
Author(s):  
Yu-Rong Liu ◽  
Jie Liu ◽  
Jia-Qi Song ◽  
Pui-To Lai ◽  
Ruo-He Yao
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Practical Applications ◽  
Gate Structure ◽  
Dual Gate ◽  
Indium Gallium ◽  
Output Characteristics

An amorphous indium–gallium–zinc–oxide (a-IGZO) thin-film transistor (TFT) with a planar split dual gate (PSDG) structure has been proposed, fabricated and characterized. Experimental results indicate that the two independent gates can provide dynamical control of device characteristics such as threshold voltage, sub-threshold swing, off-state current and saturation current. The transconductance extracted from the output characteristics of the device increases from [Formula: see text] to [Formula: see text] for a change of control gate voltage from −2 V to 2 V, and thus the device could be used in a variable-gain amplifier. A significant advantage of the PSDG structure is its flexibility in controlling the device performance according to the need of practical applications.

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