Influence of Phosphorus Concentrations in a-SiN:H Gate Layer on Electron Mobility in Thin Film Transistors

2019 ◽  
Vol 25 (7) ◽  
pp. 525-530
Author(s):  
Jun Woo Kim ◽  
Young-Soo Sohn ◽  
Sie-Young Choi
Keyword(s):  
Thin Film ◽  
Electron Mobility ◽  
Thin Film Transistors ◽  
Gate Layer

scholarly journals Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

2017 ◽  
Vol 3 (3) ◽  
pp. e1602640 ◽  
Author(s):  
Hendrik Faber ◽  
Satyajit Das ◽  
Yen-Hung Lin ◽  
Nikos Pliatsikas ◽  
Kui Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Mobility ◽  
Thin Film Transistors ◽  
Oxide Thin Film

Interface optimization using diindenoperylene for C 60 thin film transistors with high electron mobility and stability

2014 ◽  
Vol 15 (11) ◽  
pp. 2749-2755 ◽  
Author(s):  
Jin-Peng Yang ◽  
Qi-Jun Sun ◽  
Keiichirou Yonezawa ◽  
Alexander Hinderhofer ◽  
Alexander Gerlach ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Mobility ◽  
Thin Film Transistors ◽  
High Electron ◽  
High Electron Mobility

Thermal-CVD Produced Amorphous-Silicon Thin-Film Transistors-Ambipolar Characteristics

1990 ◽  
Vol 192 ◽  
Author(s):  
Hiroshi Kanoh ◽  
Osamu Sugiura ◽  
Paul A. Breddels ◽  
Masakiyo Matsumura
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Electron Mobility ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Hole Mobility ◽  
Silicon Thin Film ◽  
Free Hole ◽  
Thermal Cvd ◽  
Channel Mode

ABSTRACTAmorphous-silicon thin-film transistors (a-Si TFTs) have been fabricated by using an a-Si layer deposited by low-temperature thermal-CVD method using higher silanes. The TFT with thermally grown SiO2 gate was operated in both the n-channel mode and the p-channel mode. The maximum field-effect mobility and typical on/off current ratio were 1.5 cm2/Vs and 107 for the n-channel operation, and 0.2 cm2/Vs and 106 for the p-channel operation, respectively. Free electron mobility in the conduction band and free hole mobility in the valence band have been estimated, using the temperature dependence of the field-effect mobilities. It was found that the hole mobility is as high as the electron mobility.

Bar‐Coated Organic Thin‐Film Transistors with Reliable Electron Mobility Approaching 10 cm 2 V −1 s −1

2019 ◽  
Vol 6 (1) ◽  
pp. 1901002 ◽  
Author(s):  
Junhua Bai ◽  
Yu Jiang ◽  
Zhongli Wang ◽  
Ying Sui ◽  
Yunfeng Deng ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Mobility ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

Phthalimide–thiophene-based conjugated organic small molecules with high electron mobility

2014 ◽  
Vol 2 (14) ◽  
pp. 2612-2621 ◽  
Author(s):  
Jon-Paul Sun ◽  
Arthur D. Hendsbee ◽  
Ala'a F. Eftaiha ◽  
Casper Macaulay ◽  
Lesley R. Rutledge ◽  
...  
Keyword(s):  
Thin Film ◽  
Small Molecules ◽  
Electron Mobility ◽  
Thin Film Transistors ◽  
High Electron ◽  
High Electron Mobility

High electron mobility in a series of phthalimide–thiophene small molecules has been demonstrated when incorporated into thin film transistors.

Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors

2008 ◽  
Vol 55 (11) ◽  
pp. 3001-3011 ◽  
Author(s):  
Flora M. Li ◽  
Gen-Wen Hsieh ◽  
Sharvari Dalal ◽  
Marcus C. Newton ◽  
James E. Stott ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Electron Mobility ◽  
Thin Film Transistors ◽  
High Electron ◽  
Nanocomposite Thin Film ◽  
Zinc Oxide Nanostructures ◽  
High Electron Mobility ◽  
Oxide Nanostructures
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