Organic Field-Effect Transistors: High Electron Mobility in Air for N,N′-1H,1H-Perfluorobutyldicyanoperylene Carboxydi-imide Solution-Crystallized Thin-Film Transistors on Hydrophobic Surfaces (Adv. Mater. 32/2011)

A novel asymmetric naphthalimide derivative (IZ0) is synthesized and high electron mobility of 0.072 cm2V−1s−1and 0.22 cm2V−1s−1are achieved for IZ0 film and single crystal-based transistors, respectively.

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High Electron Mobility in Air for N,N′-1H,1H-Perfluorobutyldicyanoperylene Carboxydi-imide Solution-Crystallized Thin-Film Transistors on Hydrophobic Surfaces

Advanced Materials ◽

10.1002/adma.201101467 ◽

2011 ◽

Vol 23 (32) ◽

pp. 3681-3685 ◽

Cited By ~ 98

Author(s):

Junshi Soeda ◽

Takafumi Uemura ◽

Yu Mizuno ◽

Akiko Nakao ◽

Yasuhiro Nakazawa ◽

...

Keyword(s):

Thin Film ◽

Electron Mobility ◽

Thin Film Transistors ◽

High Electron ◽

Hydrophobic Surfaces ◽

High Electron Mobility

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n-Type Organic Field-Effect Transistors with Very High Electron Mobility Based on Thiazole Oligomers with Trifluoromethylphenyl Groups

Journal of the American Chemical Society ◽

10.1021/ja055686f ◽

2005 ◽

Vol 127 (43) ◽

pp. 14996-14997 ◽

Cited By ~ 252

Author(s):

Shinji Ando ◽

Ryo Murakami ◽

Jun-ichi Nishida ◽

Hirokazu Tada ◽

Youji Inoue ◽

...

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

High Electron ◽

Organic Field Effect Transistors ◽

High Electron Mobility ◽

Very High

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High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3

Applied Physics Express ◽

10.1143/apex.4.064201 ◽

2011 ◽

Vol 4 (6) ◽

pp. 064201 ◽

Cited By ~ 59

Author(s):

Tomonori Nishimura ◽

Choong Hyun Lee ◽

Toshiyuki Tabata ◽

Sheng Kai Wang ◽

Kosuke Nagashio ◽

...

Keyword(s):

High Pressure ◽

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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Dependence of Field-Effect Mobility on Deposition Conditions in a-Si:H TFT

MRS Proceedings ◽

10.1557/proc-336-817 ◽

1994 ◽

Vol 336 ◽

Cited By ~ 1

Author(s):

Y. Chida ◽

M. Kondo ◽

G. Ganguly ◽

A. Matsuda

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Field Effect ◽

High Performance ◽

High Mobility ◽

High Electron ◽

Field Effect Mobility ◽

Si Substrate ◽

High Electron Mobility ◽

Deposition Conditions

ABSTRACTHigh electron Mobility (over 3 cm2/Vs) thin film transistors (TFTs) have been fabricated using a-Si:H on thermally oxidized crystalline Si substrate. The procedures for fabricating the high performance TFTs are presented and the possible reasons for the high mobility are discussed.

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Interface optimization using diindenoperylene for C 60 thin film transistors with high electron mobility and stability

Organic Electronics ◽

10.1016/j.orgel.2014.07.010 ◽

2014 ◽

Vol 15 (11) ◽

pp. 2749-2755 ◽

Cited By ~ 17

Author(s):

Jin-Peng Yang ◽

Qi-Jun Sun ◽

Keiichirou Yonezawa ◽

Alexander Hinderhofer ◽

Alexander Gerlach ◽

...

Keyword(s):

Thin Film ◽

Electron Mobility ◽

Thin Film Transistors ◽

High Electron ◽

High Electron Mobility

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Novel benzo[c][1,2,5]oxadiazole-naphthalenediimide based copolymer for high-performance air-stable n-type field-effect transistors exhibiting high electron mobility of 2.43 cm2 V−1 s−1

Journal of Materials Chemistry C ◽

10.1039/c6tc05659h ◽

2017 ◽

Vol 5 (11) ◽

pp. 2892-2898 ◽

Cited By ~ 15

Author(s):

Zhiyuan Zhao ◽

Zhihong Yin ◽

Huajie Chen ◽

Yunlong Guo ◽

Qinxin Tang ◽

...

Keyword(s):

Electron Mobility ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

High Electron ◽

High Electron Mobility

A copolymer (PNBO) containing benzo[c][1,2,5]oxadiazole and naphthalenediimide acceptors was developed for high-performance air-stable n-type field-effect transistors with a mobility of 2.43 cm2 V−1 s−1.

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