Oxygen Pathway in Ag Cathode using Oxygen Isotope Exchange and Secondary Ion Mass Spectroscopy

2019 ◽  
Vol 25 (2) ◽  
pp. 2667-2674 ◽  
Author(s):  
Minoru Muranaka ◽  
Kazuya Sasaki ◽  
Akihiro Suzuki ◽  
Takayuki Terai





2004 ◽  
Vol 89 (11-12) ◽  
pp. 1822-1825 ◽  
Author(s):  
Theodore C. Labotka ◽  
David R. Cole ◽  
Mostafa Fayek ◽  
Lee R. Riciputi ◽  
Frank J. Stadermann




2004 ◽  
Vol 809 ◽  
Author(s):  
Mudith S. A. Karunaratne ◽  
Janet M. Bonar ◽  
Jing Zhang ◽  
Arthur F. W. Willoughby

ABSTRACTIn this paper, we compare B diffusion in epitaxial Si, Si with 0.1%C, SiGe with 11% Ge and SiGe:C with 11%Ge and 0.1%C at 1000°C under interstitial, vacancy and non-injection annealing conditions. Diffusion coefficients of B in each material were extracted by computer simulation, using secondary ion mass spectroscopy (SIMS) profiles obtained from samples before and after annealing.Interstitial injection enhances B diffusion considerably in all materials compared to inert annealing. In samples which experienced vacancy injection, B diffusion was suppressed. The results are consistent with the view that B diffusion in these materials occurs primarily via interstitialcy type defects.





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