Characterization of Phosphorous and Boron Doped Silicon Oxynitride Prepared by Plasma Enhanced Chemical Vapor Deposition

2019 ◽  
Vol 25 (8) ◽  
pp. 711-718
Author(s):  
Fei Sun ◽  
Gabriël Sengo ◽  
Alfred Driessen ◽  
Kerstin Wörhoff
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Boron Doped ◽  
Doped Silicon

Characterization of undoped and boron-doped polycrystalline diamond films synthesized by hot-filament chemical vapor deposition using methanol

1994 ◽  
Vol 3 (4-6) ◽  
pp. 618-622 ◽  
Author(s):  
Takashi Sugino ◽  
Kiyoshi Karasutani ◽  
Fumihiro Mano ◽  
Hiroya Kataoka ◽  
Junji Shirafuji ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Boron Doped ◽  
Hot Filament

Strain and Electrical Characterization of Boron-Doped SiGeC Layers Grown by Chemical Vapor Deposition

2004 ◽  
Vol T114 ◽  
pp. 31-33
Author(s):  
J Hållstedt ◽  
A Parent ◽  
S-L Zhang ◽  
M Östling ◽  
H H Radamson
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Boron Doped

Photoluminescence and Raman Scattering Correlated Study of Boron-Doped Silicon Nanowires

2005 ◽  
Vol 23 ◽  
pp. 137-140
Author(s):  
X.B. Zeng ◽  
X.B. Liao ◽  
S.T. Dai ◽  
B. Wang ◽  
Y.Y. Xu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Raman Scattering ◽  
Amorphous Silicon ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Boron Doped ◽  
Doped Silicon ◽  
81.15 Gh

Boron-doped (B-doped) silicon nanowires (SiNWS) have been prepared and characterized by Raman scattering and photoluminescence (PL). B-doped SiNWS were grown by plasma enhanced chemical vapor deposition (PECVD), using diborane (B2H6) as the dopant gas. Raman spectra show a band at 480cm-1,which is attributed to amorphous silicon. Photoluminescence at room temperature exhibits three distinct emission peaks at 1.34ev,1.42ev,1.47ev. Possible reason for these is suggested. PACS: 36.40._c; 81.15.Gh; 81.20._n

Growth and Characterization of Boron-Doped Si1-x-yGexCy Layers Grown by Reduced Pressure Chemical Vapor Deposition

2005 ◽  
Vol 245-246 ◽  
pp. 39-50
Author(s):  
H.H. Radamson ◽  
J. Hållstedt
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reduced Pressure ◽  
Boron Doped ◽  
Pressure Chemical ◽  
Silicon Based

In this paper, the following issues: epitaxial growth, boron incorporation and electrical properties of Si1-x-yGexCy layers grown by reduced pressure chemical vapor deposition (RPCVD) are presented. Furthermore, diffusion of carbon and boron in silicon-based material is also discussed.

Theoretical studies of H2 desorption processes in chemical vapor deposition of boron-doped silicon surfaces

1999 ◽  
Vol 436 (1-3) ◽  
pp. 175-192 ◽  
Author(s):  
P.Jeffrey Hay ◽  
Randall C. Boehm ◽  
Joel D. Kress ◽  
Richard L. Martin
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Surfaces ◽  
Theoretical Studies ◽  
Boron Doped ◽  
Doped Silicon
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