Strain and Electrical Characterization of Boron-Doped SiGeC Layers Grown by Chemical Vapor Deposition

2004 ◽  
Vol T114 ◽  
pp. 31-33
Author(s):  
J Hållstedt ◽  
A Parent ◽  
S-L Zhang ◽  
M Östling ◽  
H H Radamson
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Boron Doped

Characterization of undoped and boron-doped polycrystalline diamond films synthesized by hot-filament chemical vapor deposition using methanol

1994 ◽  
Vol 3 (4-6) ◽  
pp. 618-622 ◽  
Author(s):  
Takashi Sugino ◽  
Kiyoshi Karasutani ◽  
Fumihiro Mano ◽  
Hiroya Kataoka ◽  
Junji Shirafuji ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Boron Doped ◽  
Hot Filament

A Novel Implantation Free Raised Source/Drain Mosfet Process Using Selective Rapid Thermal Chemical Vapor Deposition Of In-Situ Boron Doped SixGe1-x

1993 ◽  
Vol 303 ◽  
Author(s):  
Xiaowei Ren ◽  
Mehmet C. Öztürk ◽  
Douglas T. Grider ◽  
Mahesh Sanganeria ◽  
Stanton Ashburn
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Sacrificial Layer ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Doping Profile ◽  
Mos Transistors ◽  
Thermal Chemical Vapor Deposition ◽  
Boron Doped

ABSTRACTIn this paper, we report electrical characterization of raised source/drain MOS transistors fabricated using selectively deposited, in-situ boron doped SixGe1-x as a solid diffusion source to form the source/drain junctions. The alloy can be deposited with an enhanced selectivity at temperatures as low as 600°C resulting in an abrupt doping profile at the SixGe1-x/Si interface. After deposition, junctions are formed by diffusion of boron from the deposited layer into the silicon substrate. The selectively deposited alloy can serve as a sacrificial layer for self-aligned silicide formation elimintaing the problem of silicon consumption in the substrate. In this work, selective depositions were performed in a typical cold-walled, lamp heated rapid thermal chemical vapor deposition (RTCVD) system at ∼ 610 °C using SiH2C12, GeH4 and B2H6 as the reactive gases. Using this process, MOS transistors with effective channel lengths down to 0.45 gtm were successfully fabricated.

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